English
Español
tiếng việt
русский
Exceptionally high thermal conductivity (≈170 W/m·K) for efficient heat dissipation in high-power electronics.
Excellent electrical insulation with volume resistivity >10¹⁴ Ω·cm at 25°C.
Low coefficient of thermal expansion (CTE ≈ 4.5 ppm/°C), closely matched to silicon and GaAs devices.
High mechanical strength and chemical stability in harsh operating environments.
Hermetic, non-porous structure ensuring long-term reliability under thermal cycling and humidity exposure.
Power modules for electric vehicles (EVs) and hybrid powertrains.
Laser diode packages and high-brightness LED substrates.
RF and microwave packaging for 5G base station amplifiers.
High-power IGBT and SiC MOSFET module substrates.
Sensors and MEMS packaging requiring stable thermal-electrical performance.
| Chemical Type | Aluminum Nitride (AlN) |
| Product Form | Sintered ceramic substrate (standard thickness: 0.32 mm, 0.63 mm, 1.0 mm; customizable) |
| Appearance | Off-white to light gray, fine-grained, polished or lapped surface finish |
| Melting Point | ≈2200°C (decomposes before melting under atmospheric conditions) |
| Primary Applications | High-power electronic packaging, RF modules, optoelectronic device substrates |
| Key Features | High thermal conductivity, low CTE, high dielectric strength (>15 kV/mm), excellent thermal shock resistance |
| Benefits | Enables compact, high-efficiency thermal management; reduces hot-spot formation and improves device lifetime |
| Regulatory Compliance | RoHS 2015/863 compliant; REACH SVHC-free; no intentionally added PFAS |
| Common Compatible Systems | Suitability |
| Silver (Ag) thick-film pastes & sintered Ag metallization | Highly Recommended – Excellent adhesion and interfacial stability up to 300°C |
| Cu-metallized DBC (Direct Bonded Copper) processes | Recommended – Requires optimized oxide layer control and bonding parameters |
| Active metal brazing (AMB) with Ti-Cu-Ni alloys | Highly Recommended – Superior joint strength and hermeticity for automotive-grade modules |
| Thin-film Cr/Cu or Ti/Pt/Au sputtering systems | Suitable – Standard process compatibility; requires surface activation pretreatment |
Q1: What is the CAS Number for MARUWA AlN AN-170?
A: Aluminum nitride (AlN) has a single CAS Registry Number: 24304-00-5. MARUWA AN-170 is a high-purity sintered form of this compound, not a chemically modified derivative.
Q2: Is MARUWA AlN AN-170 subject to migration or leaching under humid or aqueous conditions?
A: No significant migration occurs. Fully densified AN-170 exhibits negligible hydrolysis below 200°C and pH 4–10; surface aluminum oxide passivation layer further inhibits ion release in ambient or encapsulated applications.
Q3: How does AN-170 compare to standard Al₂O₃ (alumina) and BeO substrates in thermal performance?
A: AN-170 offers ~10× higher thermal conductivity than 96% alumina (~170 vs. ~17 W/m·K) and ~70% of BeO’s performance (~250 W/m·K), without beryllium toxicity concerns—making it the preferred high-safety, high-performance alternative.
Q4: Does MARUWA AlN AN-170 comply with automotive AEC-Q200 stress test requirements?
A: While the raw substrate itself is not AEC-Q200 certified, it is widely qualified *as part of finished modules* meeting AEC-Q200 Grade 0/1 (−40°C to +150°C) when processed with compatible metallization and assembly methods per customer qualification protocols.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
Have a Questions? Call Us:
Add:
Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
