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High-resolution positive-tone photoresist optimized for g-line (436 nm) and i-line (365 nm) lithography.
Excellent thermal stability and post-exposure bake (PEB) latitude for robust process control.
Superior adhesion to silicon, silicon dioxide, and metal substrates without requiring additional primers.
Low outgassing profile suitable for vacuum-based lithographic processes and cleanroom environments.
Consistent batch-to-batch performance validated per ISO 9001 and SEMI S2/S8 standards.
Microelectronics fabrication of discrete semiconductors and power devices.
MEMS (Micro-Electro-Mechanical Systems) patterning with high aspect ratio features.
Flat panel display (FPD) array manufacturing, including TFT backplane patterning.
Advanced packaging applications such as redistribution layer (RDL) and via-in-pad structures.
Research and development in nanofabrication labs requiring reproducible sub-micron resolution.
| Chemical Type | Novolac resin-based positive photoresist with diazonaphthoquinone (DNQ) photosensitizer |
| Product Form | Liquid solution in propylene glycol monomethyl ether acetate (PGMEA) |
| Appearance | Clear, pale yellow to amber liquid, free of particulates |
| Viscosity (23 °C) | 2.2 – 2.6 cP (as supplied, 4% solids typical) |
| Primary Applications | g-line/i-line photolithography for feature sizes ≥ 0.8 µm |
| Key Features | High sensitivity (~40–60 mJ/cm² at i-line), low standing wave effect, excellent develop rate uniformity |
| Benefits | Reduced defect density, extended process window, compatibility with standard TMAH developers |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| ASML PAS 5500 / 600 Series Steppers | Highly Recommended – Validated for g/i-line exposure with standard illumination optics |
| Canon FPA-3000 i-line Stepper | Highly Recommended – Optimized focus/exposure matrix available from Merck technical support |
| Tokyo Electron (TEL) CLEAN TRACK ACT series | Recommended – Fully compatible with standard coating, bake, and develop modules |
| SUSS MicroTec MA/BA Coaters & Aligners | Suitable – Requires minor optimization of spin speed and soft-bake profile |
Q1: What is the CAS Registry Number for Merck AZ 4620 Photoresist?
A: AZ 4620 is a proprietary multi-component formulation; individual components have CAS numbers (e.g., novolac resin ~9003-36-5, DNQ ~1334-27-6), but the final product is not assigned a single CAS number per IUPAC and regulatory guidance for mixtures.
Q2: What is the recommended coating thickness and spin speed range for 1.0 µm features?
A: For 1.0 µm nominal thickness (measured after soft bake), use 3500–4200 rpm on 150 mm wafers and 3200–3800 rpm on 200 mm wafers; soft bake at 90 °C for 60 seconds is standard.
Q3: How does AZ 4620 compare to AZ 4562 or AZ 5214 in terms of resolution and process latitude?
A: AZ 4620 offers higher resolution (≥ 0.8 µm) and wider PEB latitude than AZ 4562 (≥ 1.5 µm), while providing better contrast and lower dark erosion than AZ 5214—making it preferred for demanding i-line processes where fidelity and CD control are critical.
Q4: Is AZ 4620 compliant with food contact or medical device regulations (e.g., FDA 21 CFR, ISO 10993)?
A: No—AZ 4620 is intended exclusively for semiconductor and microfabrication use. It is not formulated, tested, or certified for food contact, implantable devices, or biological applications. Residual resist removal must comply with wafer cleaning protocols prior to device encapsulation.
Q5: Are there known extractables or leachables from AZ 4620 under standard processing conditions?
A: When fully processed (exposed, developed, and hard-baked at ≥ 120 °C), residual extractables are below detection limits (< 0.1 ppm) in aqueous and organic simulants per ICH Q5C guidelines; unprocessed resist film may release trace PGMEA and low-MW phenolics during rinse steps—adequate DI water rinse and N₂ dry are required.
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E-mail: wangxingqiang@ericwchem.com
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