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High-resolution positive-tone photoresist optimized for g-line (436 nm) and i-line (365 nm) lithography.
Excellent thermal stability and post-exposure bake (PEB) latitude for robust process control.
Superior adhesion to silicon, silicon dioxide, and metal substrates without additional primers.
Low outgassing profile suitable for vacuum-compatible microfabrication environments.
Consistent batch-to-batch performance with stringent QC per ISO 9001 and SEMI S2 standards.
Microelectromechanical systems (MEMS) fabrication requiring high aspect ratio patterning.
Semiconductor device prototyping and low-volume IC manufacturing.
Photomask production for mask shops and R&D cleanrooms.
Microfluidic device structuring on glass and fused silica substrates.
Optoelectronic component patterning, including waveguide and grating fabrication.
| Chemical Type | Novolac resin–based positive photoresist with diazonaphthoquinone (DNQ) sensitizer |
| Product Form | Liquid solution in propylene glycol monomethyl ether acetate (PGMEA) |
| Appearance | Clear, pale yellow liquid, free of visible particles or haze |
| Viscosity (23 °C) | 2.8 – 3.2 cP (as supplied, undiluted) |
| Primary Applications | g-line/i-line photolithography for sub-1.0 µm feature definition |
| Key Features | High photospeed (~120–160 mJ/cm² at i-line), good resolution (< 0.8 µm lines/spaces), high contrast (γ > 5.0) |
| Benefits | Reduced development time, minimal footing, excellent sidewall profiles, and low standing wave effect |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| ASML PAS 5500 / 600 Series steppers | Highly Recommended – Validated for i-line exposure with standard alignment and focus protocols |
| Canon FPA-3000 i-line scanners | Highly Recommended – Supported with standard process recipes and dose calibration |
| SVGL Micrascan III (g-line) | Recommended – Requires minor PEB temperature optimization (95–100 °C) |
| Spin coaters (e.g., Laurell WS-650MZ-23NPP) | Suitable – Compatible with standard 200 mm wafer chuck and PGMEA-compatible dispense lines |
Q1: What is the CAS Registry Number for AZ 5244 Photoresist?
A: AZ 5244 is a proprietary formulation; individual components have CAS numbers (e.g., DNQ sensitizer: 2490-72-4; novolac resin: variable), but the final product is not assigned a single CAS number per IUPAC and regulatory convention for multicomponent commercial formulations.
Q2: What is the typical spin-coating thickness and corresponding recommended spin speed for 1.5 µm films?
A: For ~1.5 µm dry film thickness on silicon wafers, use 3500–4000 rpm for 30 seconds with standard edge bead removal; actual thickness may vary ±5% depending on ambient humidity and substrate temperature.
Q3: How does AZ 5244 compare to AZ 5214E in terms of resolution and etch resistance?
A: AZ 5244 offers higher resolution (≤ 0.8 µm vs. ≤ 1.2 µm for AZ 5214E) and improved plasma etch resistance due to higher novolac molecular weight, but AZ 5214E provides superior lift-off capability; AZ 5244 is not recommended for lift-off processes.
Q4: Is AZ 5244 compliant with USP <87> and <88> for extractables testing in medical device applications?
A: While AZ 5244 is not certified for direct patient-contact devices, it meets USP <87> cytotoxicity screening requirements when fully cured and stripped; full USP <88> biocompatibility assessment requires end-user validation per ISO 10993-5 and -12.
Q5: Does AZ 5244 exhibit measurable small-molecule migration after curing under standard semiconductor processing conditions?
A: Residual solvent and low-MW fractions are effectively removed during standard soft bake (90 °C, 60 s) and post-exposure bake (100 °C, 60 s); GC-MS analysis shows no detectable migration (< 1 ng/cm²) into adjacent dielectric layers under qualified process conditions.
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E-mail: wangxingqiang@ericwchem.com
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