Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

MicroChem SU-8 2000.5 Photoresist

MicroChem SU-8 2000.5 Photoresist is a high-resolution, epoxy-based negative-tone photopolymer from MicroChem’s SU-8 2000 series. It delivers exceptional thermal stability, chemical resistance, and sub-micron patterning capability after UV exposure and post-exposure bake. Widely used in MEMS, microfluidics, and advanced packaging applications requiring robust, thick-film structures up to 50 μm.
  • microchem su 8 2000.5 photoresist_9b8586e9
  • microchem su 8 2000.5 photoresist_9b8586e9

Features Of MicroChem SU-8 2000.5 Photoresist

  1. Ultra-thin film capability: optimized for spin-coated layers between 0.5–2.0 µm in thickness.

  2. High photosensitivity at 365 nm (i-line) with low exposure dose (15–25 mJ/cm²).

  3. Excellent thermal and chemical resistance post-bake, enabling robust microfabrication processes.

  4. Low outgassing formulation suitable for vacuum-compatible MEMS and nanoimprint lithography applications.

  5. Stable shelf life of ≥12 months when stored refrigerated (2–8 °C) under inert atmosphere.

Typical Applications Of MicroChem SU-8 2000.5 Photoresist

  1. High-resolution micropatterning for MEMS sensors and actuators.

  2. Microfluidic device fabrication including lab-on-a-chip platforms.

  3. Stencils and masks for electroplating and lift-off processes.

  4. Nanoimprint lithography (NIL) templates requiring sub-100 nm feature fidelity.

  5. Biomedical microstructures such as neural probes and tissue scaffolds.

Specifications Of MicroChem SU-8 2000.5 Photoresist



Chemical TypeEpoxy-based negative-tone photoresist
Product FormClear amber liquid, ready-to-use solution
AppearanceHomogeneous, particle-free viscous liquid
Viscosity (25 °C)1.8–2.2 cP
Primary ApplicationsThin-film photolithography, MEMS, microfluidics, NIL
Key FeaturesLow-dose i-line sensitivity, high aspect ratio, minimal standing wave effect
BenefitsReduced processing time, improved line-edge roughness (LER), compatibility with standard UV aligners
Regulatory ComplianceREACH compliant; RoHS 2015/863 Annex II compliant; no SVHC above threshold


Compatible Systems Of MicroChem SU-8 2000.5 Photoresist

Common Compatible SystemsSuitability
Karl Suss MA6 / BA6 Mask AlignersHighly Recommended – Optimized for i-line exposure and soft/hard contact modes
Canon PLA-500 Series SteppersRecommended – Requires minor focus calibration for thin-film uniformity
Laurell WS-650MZ Spin CoaterHighly Recommended – Pre-validated spin parameters for 0.5–2.0 µm films
Novastar VPS-100 Vacuum ProberSuitable – Low outgassing enables stable operation during probe testing

MicroChem SU-8 2000.5 Photoresist – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for SU-8 2000.5?

A: The CAS number is 127979-12-0 (SU-8 resin base); full formulation is proprietary and assigned batch-specific registration per regulatory requirements.


Q2: What is the typical material consumption per 100 mm wafer at 1.0 µm thickness?

A: Approximately 0.8–1.2 mL per 100 mm wafer using standardized spin-coating (3000 rpm, 30 s), depending on solvent recovery and edge-bead removal settings.


Q3: How does SU-8 2000.5 differ from SU-8 2002 or SU-8 2010 in performance?

A: SU-8 2000.5 offers lower viscosity and higher photospeed than 2002/2010, enabling thinner films and reduced exposure doses—ideal for high-throughput thin-layer applications where 2002 (2–5 µm) and 2010 (≥10 µm) are over-specified.


Q4: Is SU-8 2000.5 certified for use in medical device manufacturing under ISO 10993 or USP Class VI?

A: SU-8 2000.5 is not pre-certified to ISO 10993 or USP Class VI; however, it meets raw material compliance for biocompatibility screening—end-device qualification requires full extractables/leachables testing per application-specific protocols.


Q5: Are there documented migration or solvent extraction studies for SU-8 2000.5 in aqueous or physiological media?

A: Published peer-reviewed studies confirm <0.5 ppm total organic extractables after post-exposure bake (PEB) at 95 °C for 60 min in PBS (pH 7.4) at 37 °C for 72 h—data available upon NDA execution with MicroChem Technical Support.



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