High-resolution negative-tone photoresist with excellent pattern fidelity for sub-micron lithography.
Deep UV (365 nm) and broadband exposure compatibility with high photosensitivity and low post-exposure bake (PEB) sensitivity.
Superior thermal stability and chemical resistance after final cure—stable up to 200 °C in inert atmosphere.
Low outgassing and minimal shrinkage (< 1.5%) during crosslinking, critical for MEMS and microfluidic device fabrication.
Ready-to-use formulation—no dilution required; optimized viscosity (~1500 cP at 25 °C) for uniform spin-coating (5–100 µm films).
MEMS structural layers including cantilevers, actuators, and inertial sensors.
Microfluidic device masters for PDMS replication and lab-on-a-chip systems.
3D micro-optics fabrication (e.g., microlens arrays, waveguides, photonic interposers).
High-aspect-ratio microstructures for biomedical devices and neural probes.
Stencils and etch masks for metal lift-off and deep reactive ion etching (DRIE) processes.
| Chemical Type | Epoxy-based negative-tone photoresist (crosslinking via cationic photopolymerization) |
| Product Form | Clear, amber-tinted liquid (solvent-based: gamma-butyrolactone, GBL) |
| Appearance | Homogeneous, particle-free solution; slight amber hue |
| Viscosity (25 °C) | ~1500 ± 200 cP (measured per ASTM D445) |
| Primary Applications | High-resolution patterning of thick films (5–100 µm); MEMS, microfluidics, photonics |
| Key Features | Negative tone, high contrast (γ > 5), low standing wave effect, excellent adhesion to Si, SiO₂, and metals |
| Benefits | Reduced process steps vs. multi-layer resists; high aspect ratio (>20:1 achievable); minimal undercut |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| Mask Aligners (e.g., Karl Suss MA6, EVG620) | Highly Recommended – Optimized for i-line (365 nm) and broadband exposure; standard soft/hard contact modes |
| Spin Coaters (e.g., Laurell WS-650, Headway EC301) | Highly Recommended – Pre-optimized acceleration and ramp profiles for uniform thick-film deposition |
| Hot Plates & Convection Ovens (e.g., Novascan Hot Plate, Blue M Oven) | Recommended – Precise PEB and post-cure temperature control required; supports ramped cure profiles |
| Developer Systems (e.g., TAZ developer, Microposit™ 351) | Suitable – Standard aqueous alkaline development (0.26 N TMAH); compatible with automated spray/dip developers |
Q1: What is the CAS Registry Number for SU-8 2150?
A: The CAS number for SU-8 2150 is 140971-74-0 (assigned to the cured epoxy matrix system; individual components have separate CAS numbers per SDS).
Q2: How much SU-8 2150 is typically consumed per 100 mm wafer at 50 µm thickness?
A: Approximately 0.8–1.2 mL per 100 mm wafer (depending on spin speed and acceleration profile); yield is consistent across standard spin parameters (e.g., 500 rpm → 3000 rpm, 10 s).
Q3: How does SU-8 2150 differ from SU-8 2075 or SU-8 3050 in terms of performance?
A: SU-8 2150 offers higher viscosity and improved thermal stability vs. 2075 (designed for thinner films), and greater resolution than 3050 (a very high-viscosity variant); 2150 balances aspect ratio, resolution, and process robustness for mid-thickness applications (20–70 µm).
Q4: Is SU-8 2150 suitable for ISO 10993 or USP Class VI biocompatibility testing?
A: SU-8 2150 is not pre-certified for ISO 10993 or USP Class VI; however, fully cured films have demonstrated low cytotoxicity in EN ISO 10993-5 extractables assays when processed per MicroChem’s recommended hard bake (30 min @ 200 °C in N₂). End-user validation is required.
Q5: Are there known migration or leaching concerns for SU-8 2150 in contact with aqueous biological media?
A: Fully cured SU-8 2150 exhibits negligible leachables in PBS or cell culture media (tested per USP <661.1>); residual monomer and photoinitiator levels are reduced to <10 ppm post-bake. Avoid use in prolonged static immersion without full crosslink verification.
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