Negative Photoresist Developer and Rinse RFH-2200

Features Of Negative Photoresist Developer and Rinse RFH-2200

1. Optimized aqueous-based formulation for high-resolution development of conventional novolac-diazonaphthoquinone (DNQ) negative photoresists.

2. Low foaming and excellent rinse efficiency, minimizing residue and reducing post-develop defect density.

3. Consistent performance across wide temperature and concentration ranges (20–25 °C, 1:2 to 1:4 dilution with DI water).

4. Non-corrosive to aluminum, titanium, and stainless-steel wet processing equipment.

5. Stable shelf life (>18 months unopened; >6 months in-use when stored at 15–25 °C).

Typical Applications Of Negative Photoresist Developer and Rinse RFH-2200

1. Microelectromechanical systems (MEMS) fabrication requiring high-aspect-ratio pattern fidelity.

2. Power semiconductor packaging lithography, including leadframe and substrate patterning.

3. Display driver IC manufacturing using thick-film negative resists (e.g., SU-8 derivatives).

4. Flexible printed circuit (FPC) base film patterning with polyimide-compatible process flows.

5. Industrial sensor and automotive electronics photomask-less direct-write applications.

Specifications Of Negative Photoresist Developer and Rinse RFH-2200

Compatible Systems Of Negative Photoresist Developer and Rinse RFH-2200

Negative Photoresist Developer and Rinse RFH-2200 – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for RFH-2200?

A: RFH-2200 is a proprietary multi-component formulation; individual ingredients are disclosed under confidentiality agreement, and no single CAS number applies. Full ingredient disclosure is available upon execution of an NDA and request for SDS Appendix B.

Q2: What is the recommended working concentration and dwell time for 20 µm SU-8 2075?

A: For 20 µm SU-8 2075, use 1:3 dilution (RFH-2200:DI water) at 23 °C with 60–90 seconds spray development followed by 30 seconds cascade rinse. Adjust dwell time ±15 sec based on exposure energy (typically 120–180 mJ/cm²).

Q3: How does RFH-2200 compare to standard 0.26 N TMAH in terms of residue and sidewall profile?

A: RFH-2200 delivers superior residue removal versus 0.26 N TMAH—particularly on high-topography substrates—due to its engineered surfactant system. It yields near-vertical sidewalls (≥88°) with reduced scumming, while TMAH often exhibits undercut or micro-masking at resist interfaces.

Q4: Is RFH-2200 certified for use in medical device manufacturing per ISO 10993 or USP Class VI?

A: RFH-2200 is not individually certified to ISO 10993 or USP Class VI, as it is a process chemical—not a final device component. However, extractables testing per USP <87> and <88> (cytotoxicity, systemic injection) has been performed on wafers processed with RFH-2200; results meet Class VI acceptance criteria when used within validated parameters.

Q5: Does RFH-2200 contribute to leachable amines or alkylphenol ethoxylates (APEOs) in final rinsate?

A: No. RFH-2200 contains zero APEOs and uses amine-free buffering agents. Total organic carbon (TOC) analysis of final rinse effluent shows <0.1 ppm residual organics, with no detectable primary or secondary amines (LOD: 5 ppb via LC-MS/MS).