Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

Negative Photoresist Developer RFX-2277

RFX-2277 is a high-performance negative photoresist developer from the RFX series by Tokyo Ohka Kogyo (TOK). Formulated for precision lithography in semiconductor and display manufacturing, it ensures excellent resolution, uniform dissolution, and minimal swelling. Compatible with common novolac-diazonaphthoquinone resists, RFX-2277 delivers stable process control and high throughput in advanced microfabrication applications.
  • negative photoresist developer rfx 2277_4da7236a
  • negative photoresist developer rfx 2277_4da7236a

Features Of Negative Photoresist Developer RFX-2277

  1. Optimized alkaline formulation for high-resolution development of standard negative-tone photoresists.

  2. Consistent, low-foaming performance across automated track and batch processing systems.

  3. Controlled dissolution kinetics enabling precise line-width control and minimal undercutting.

  4. Low metal ion content (<10 ppb Na, K, Ca) to prevent contamination in microelectronics fabrication.

  5. Stable shelf life (>18 months unopened) under ambient storage conditions (15–25°C).

Typical Applications Of Negative Photoresist Developer RFX-2277

  1. Wafer-level photolithography in semiconductor front-end-of-line (FEOL) manufacturing.

  2. MEMS device patterning requiring high aspect-ratio resist profiles.

  3. Flat panel display (FPD) array substrate processing for TFT-LCD and OLED backplanes.

  4. Advanced packaging applications including redistribution layer (RDL) and fan-out wafer-level packaging (FOWLP).

  5. Microfluidic device fabrication using SU-8 and related epoxy-based negative resists.

Specifications Of Negative Photoresist Developer RFX-2277



Chemical TypeAqueous alkaline solution (tetramethylammonium hydroxide – TMAH based)
Product FormLiquid concentrate (ready-to-dilute)
AppearanceClear, colorless to pale yellow liquid
pH (1:10 dilution, 25°C)13.2 ± 0.3
Density (25°C)1.02–1.04 g/cm³
Primary ApplicationsDevelopment of epoxy-based (e.g., SU-8), novolac-based, and acrylic negative photoresists
Key FeaturesLow volatility, non-oxidizing, compatible with stainless steel and polypropylene wet benches
Regulatory ComplianceREACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold


Compatible Systems Of Negative Photoresist Developer RFX-2277

Common Compatible SystemsSuitability
TOKYO ELECTRON CLEAN TRACK (ACT series)Highly Recommended – Validated for full process integration with temperature and flow control
SCREEN Semiconductor Solutions (Coater/Developer systems)Highly Recommended – Pre-qualified for SU-8 2000 and 3000 series development
SEMES D-Track ProRecommended – Requires minor nozzle calibration; stable throughput at 23°C ± 0.5°C
Manual spin-coater & immersion bath setupsSuitable – Effective with standardized 60-second development time and DI water rinse protocol

Negative Photoresist Developer RFX-2277 – Frequently Asked Questions (FAQ)

Q1: What is the CAS Number for RFX-2277?

A: RFX-2277 is a proprietary multi-component formulation; it does not have a single CAS number. Its primary active ingredient, tetramethylammonium hydroxide (TMAH), carries CAS No. 75-59-2. Full compositional disclosure is available under NDA.


Q2: What is the recommended working concentration and development time?

A: Dilute 1 part RFX-2277 with 9 parts deionized water (10% v/v) for standard SU-8 processing. Typical development time ranges from 30–90 seconds at 23°C, depending on film thickness and exposure dose.


Q3: How does RFX-2277 compare to generic TMAH developers?

A: RFX-2277 includes proprietary surfactant and chelating additives that reduce surface tension by ~25%, improve resist edge acuity, and suppress micro-bridging—unachievable with standard 2.38% TMAH solutions.


Q4: Is RFX-2277 certified for use in ISO Class 5 cleanrooms?

A: Yes — lot-specific particle count data (per JIS B 9927) confirms ≤5 particles ≥0.5 µm per mL in filtered product (0.1 µm PTFE membrane). Certificate of Analysis provided with each shipment.


Q5: Does RFX-2277 exhibit leachable residues or extractables in post-develop rinse water?

A: No detectable organic extractables (by GC-MS, LOD <1 ppb) or ionic residues (by IC, LOD <0.1 ppm) are observed following standard DI rinse (≥30 sec, 2 L/min flow). Residual TMAH levels remain below 5 ppm — well within SEMI C33-0301 limits.



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