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Highly selective removal of photoresist edge beads without undercutting or damaging underlying resist patterns.
Low surface tension formulation ensures uniform coverage and effective capillary action at wafer edges.
Non-corrosive to aluminum, copper, titanium, and low-k dielectric materials commonly used in advanced semiconductor processes.
Fast-evaporating solvent blend enables rapid processing and minimal dwell time on wafers.
Compatible with both positive and negative tone photoresists across g-line, i-line, KrF, and ArF lithography platforms.
Semiconductor front-end-of-line (FEOL) and back-end-of-line (BEOL) photolithography process steps.
Advanced packaging applications including fan-out wafer-level packaging (FOWLP) and 2.5D/3D integration.
MEMS and sensor fabrication requiring precise edge definition and residue-free sidewalls.
Compound semiconductor manufacturing for GaAs, SiC, and GaN-based devices.
Display panel production using thin-film transistor (TFT) patterning on glass and flexible substrates.
| Chemical Type | Proprietary solvent blend (non-halogenated) |
| Product Form | Liquid (ready-to-use) |
| Appearance | Clear, colorless liquid |
| Boiling Point Range | 85–110 °C |
| Primary Applications | Edge bead removal after spin-coating of photoresist |
| Key Features | Resist-selective, low particulate, ultra-low metal ion content (<1 ppb) |
| Benefits | Reduces post-litho defects, improves CD uniformity, enhances yield in high-volume manufacturing |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| TOKYO ELECTRON (TEL) CLEAN TRACK™ series | Highly Recommended – Optimized dispensing and rinse protocols validated |
| SCREEN Semiconductor Solutions Dainippon Screen MZ series | Highly Recommended – Fully integrated into edge bead removal modules |
| DISCO DFP8760 / DFP8860 Edge Trim Systems | Recommended – Requires minor nozzle calibration for optimal coverage |
| Manual spin coater + edge rinse station (e.g., Laurell WS-650) | Suitable – Compatible with standard syringe or spray-based manual application |
Q1: What is the CAS Registry Number for Photoresist Edge Bead Remover EBR?
A: This is a proprietary multi-component formulation; individual components are disclosed under NDA, and no single CAS number applies to the finished product. Full ingredient disclosure is available upon execution of a CDA.
Q2: What is the recommended dosage per 200 mm wafer?
A: Typical usage is 0.8–1.2 mL per 200 mm wafer, applied via precision dispense nozzle during edge rinse step; volume may vary based on resist thickness and spin speed.
Q3: How does EBR compare to acetone or IPA for edge bead removal?
A: Unlike acetone or IPA, EBR offers superior selectivity, reduced resist swelling, and no adverse interaction with anti-reflective coatings (BARC) or adhesion promoters—critical for sub-28 nm node processes.
Q4: Is EBR certified for use in ISO Class 1 cleanrooms?
A: Yes—manufactured and packaged in ISO Class 3 (Class 1 at point-of-use) cleanroom environments; certified for particle count <1 particle/mL @ ≥0.2 µm (per JIS B 9921).
Q5: Has extractable/leachable testing been performed for high-aspect-ratio via applications?
A: Yes—validated per USP <87> and <88>; no detectable leachables (<0.1 ppm) observed in post-rinse analysis for Cu, Co, Ta, and SiO₂ surfaces after 60 s exposure at 23 °C.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
