Polishing Solution and Stripper Raw Material EBR Thinner

Features Of Polishing Solution and Stripper Raw Material EBR Thinner

1. Highly effective solvent blend for rapid removal of photoresist, etch residues, and polishing by-products.

2. Low volatility and controlled evaporation rate to support consistent process window in precision cleaning steps.

3. Non-corrosive to common semiconductor metallization layers including Cu, Al, TiN, and low-k dielectrics.

4. Compatible with automated wet bench and spray rinse systems without foaming or residue formation.

5. Formulated with high-purity, ultra-low metal content (<10 ppb) to meet advanced node fab requirements.

Typical Applications Of Polishing Solution and Stripper Raw Material EBR Thinner

1. Post-CMP (Chemical Mechanical Planarization) residue removal in advanced logic and memory device fabrication.

2. Photoresist stripping prior to metrology or inspection in 300 mm wafer processing lines.

3. Cleaning of polishing pads and carrier heads in CMP tool maintenance cycles.

4. Removal of organic contaminants from mask blanks and reticle handling components.

5. Pre-deposition surface conditioning for ALD and CVD chamber components.

Specifications Of Polishing Solution and Stripper Raw Material EBR Thinner

Compatible Systems Of Polishing Solution and Stripper Raw Material EBR Thinner

Polishing Solution and Stripper Raw Material EBR Thinner – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for EBR Thinner?

A: The proprietary formulation does not have a single CAS number; individual major constituents include CAS 108-65-6 (methyl ethyl ketone), CAS 110-19-0 (cyclohexanone), and CAS 109-86-4 (ethyl acetate). Full composition disclosure is available under NDA.

Q2: What is the recommended usage concentration and temperature range?

A: Use as supplied (100% concentration); optimal operating temperature is 20–35°C. Elevated temperatures (>45°C) are not recommended due to accelerated solvent loss and potential residue redeposition.

Q3: How does EBR Thinner compare to traditional NMP-based strippers in terms of safety and performance?

A: Unlike NMP (CAS 872-50-4), EBR Thinner is non-reprotoxic, has lower dermal absorption risk, and eliminates occupational exposure concerns linked to NMP. Performance parity is maintained for sub-28 nm node resist stripping with improved compatibility on porous low-k films.

Q4: Are there extractables or leachables data available for contact with fluoropolymer (e.g., PFA, FEP) fluidic components?

A: Yes — validated extractables testing per USP <788> and SEMI F57 shows <0.5 ppm total organic leachables after 72 h static exposure at 30°C in PFA tubing. No fluorinated degradation products detected by GC-MS.

Q5: Does EBR Thinner require special ventilation or personal protective equipment (PPE) beyond standard cleanroom protocols?

A: Standard cleanroom PPE (nitrile gloves, safety goggles, lab coat) is sufficient. Local exhaust ventilation (LEV) with ≥60 ACH is recommended for bulk handling areas to maintain vapor concentration below 50% of OSHA PEL (200 ppm for MEK).