Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

Polishing Solution and Stripper Raw Material Hydrofluoric Acid

Dow Corning® Q2-3263 Polishing Solution & Stripper Raw Material Hydrofluoric Acid is a high-purity, low-metal HF formulation engineered for precision silicon wafer etching and photoresist stripping. It ensures consistent surface finish, minimal residue, and superior process control in semiconductor manufacturing with strict safety handling protocols.
  • polishing solution and stripper raw material hydrofluoric acid_031ffade
  • polishing solution and stripper raw material hydrofluoric acid_031ffade

Features Of Polishing Solution and Stripper Raw Material Hydrofluoric Acid

  1. High-purity, low-metal-grade hydrofluoric acid optimized for precision etching and surface conditioning in semiconductor and optical manufacturing.

  2. Controlled volatility and consistent reactivity profile enabling reproducible material removal rates across batch processing.

  3. Stabilized formulation with trace inhibitors to minimize premature decomposition and maintain shelf-life stability under recommended storage conditions.

  4. Supplied in chemically resistant HDPE or PTFE-lined containers compliant with UN 3264 transport regulations for Class 8 corrosive substances.

  5. Batch-certified with CoA (Certificate of Analysis) including assay, heavy metals (Pb, Fe, Cu), particulates (<0.5 µm), and water content.

Typical Applications Of Polishing Solution and Stripper Raw Material Hydrofluoric Acid

  1. Primary raw material in buffered oxide etchants (BOE) for silicon dioxide and silicon nitride removal in IC fabrication.

  2. Key component in glass polishing slurries for flat-panel display (FPD) and precision optics manufacturing.

  3. Active ingredient in photoresist stripper formulations for post-etch residue clean in MEMS and advanced packaging processes.

  4. Surface activation agent for ceramic and quartz substrates prior to metallization or bonding steps.

  5. Chemical mechanical planarization (CMP) post-clean additive to remove silica-based slurry residues and native oxide layers.

Specifications Of Polishing Solution and Stripper Raw Material Hydrofluoric Acid



Chemical TypeAnhydrous or aqueous hydrofluoric acid (HF), ultra-high purity grade
Product FormLiquid (49% w/w aqueous solution standard; custom concentrations available)
AppearanceClear, colorless liquid; no visible particulates or haze
Melting Point19.5 °C (for 49% aqueous HF)
Boiling Point112.2 °C (for 49% aqueous HF)
Primary ApplicationsEtchant precursor, oxide stripping, surface passivation, CMP residue removal
Key FeaturesLow sodium, potassium, calcium, iron, copper, aluminum (<1 ppb each by ICP-MS); <0.1 ppm total metals
Regulatory ComplianceREACH registered; TSCA listed; SDS available per OSHA HCS 2012; compliant with ISO 9001:2015 quality system


Compatible Systems Of Polishing Solution and Stripper Raw Material Hydrofluoric Acid

Common Compatible SystemsSuitability
Ammonium Fluoride–Hydrofluoric Acid (NH₄F/HF) Buffered Etch SystemsHighly Recommended – Enables precise control of SiO₂ etch rate and selectivity over Si and photoresist
Automated Wet Bench Processing Lines (e.g., Modutek, SemiQ, Entegris)Recommended – Compatible with quartz, PVDF, and PFA fluidic components when properly diluted and temperature-controlled
Inline Spray Rinse and Megasonic Cleaning ModulesSuitable – Effective for post-etch residue removal when integrated with DI water rinse and nitrogen dry cycles
Recirculating BOE Delivery Systems with Real-Time Conductivity MonitoringHighly Recommended – Stable performance with minimal drift; supports closed-loop concentration control

Polishing Solution and Stripper Raw Material Hydrofluoric Acid – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for this hydrofluoric acid grade?

A: The CAS number is 7664-39-3. All batches are traceable to this identifier and verified via FTIR and titrimetric assay.


Q2: Can this HF be used directly in process tools, or does it require dilution?

A: It must be diluted prior to use — typically to 0.5–5% HF in deionized water or buffered solutions. Direct use of concentrated HF is unsafe and incompatible with most tool wet stations.


Q3: How does this grade differ from technical-grade HF in terms of metal contamination?

A: This grade meets SEMI C12 purity standards (<10 ppt transition metals), whereas technical-grade HF may contain >100 ppb Fe/Cu/Al — unacceptable for sub-28nm node fabrication due to device leakage and threshold voltage shift.


Q4: Is there risk of fluorosilicate migration or leaching into downstream process fluids?

A: When used within validated concentration, temperature, and contact time limits — and followed by thorough DI water rinsing — fluorosilicate formation and residual leaching are negligible, as confirmed by TO-15 GC-MS and IC analysis of rinse effluents.


Q5: Does this product comply with EU Biocidal Products Regulation (BPR) or US EPA TSCA requirements for industrial chemical importers?

A: Yes — it is fully TSCA Inventory-listed and exempt from BPR classification, as HF is not used as a biocide but as a process reagent. Full regulatory dossiers and SCIP notifications are available upon request.



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