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Optimized alkaline formulation for high-resolution development of g-line, i-line, and KrF photoresists.
Consistent performance across wide temperature and concentration ranges (20–25 °C; 0.1–0.3% w/w in DI water).
Low metal ion content (<10 ppb Na, K, Ca, Fe) to minimize contamination in semiconductor fabrication environments.
Excellent shelf stability: remains chemically stable for ≥12 months when stored unopened at 15–25 °C.
Low foaming and low volatility, supporting stable spray and puddle development processes in track systems.
Semiconductor front-end-of-line (FEOL) lithography for logic and memory device manufacturing.
Advanced packaging applications including fan-out wafer-level packaging (FOWLP) and bump lithography.
MEMS and sensor fabrication requiring high-fidelity pattern transfer and minimal resist swelling.
Flat panel display (FPD) array and color filter patterning with TFT-LCD and OLED substrates.
Compound semiconductor processing for GaAs and SiC-based RF and power devices.
| Chemical Type | Aqueous tetramethylammonium hydroxide (TMAH)-based solution |
| Product Form | Clear, colorless liquid concentrate |
| Appearance | Transparent, homogeneous, free of particulates or haze |
| pH (1% w/w in DI water, 23 °C) | 13.4 ± 0.2 |
| Density (20 °C) | 1.012–1.018 g/cm³ |
| Primary Applications | Positive-tone photoresist development in semiconductor, MEMS, and display manufacturing |
| Key Features | Low particle count (<5 particles/mL @ ≥0.2 μm), ultra-low metallic impurities, ISO Class 5 cleanroom compatible |
| Regulatory Compliance | REACH SVHC-free; RoHS 3 compliant; no listed Prop 65 carcinogens or reproductive toxins |
| Common Compatible Systems | Suitability |
| TOK PAK series (e.g., PAK-300, PAK-500) | Highly Recommended – Demonstrated full compatibility and process window match |
| Fujifilm UVIII / UVNII resists | Highly Recommended – Optimized developer concentration and dwell time validated |
| JSR TSMR series (e.g., TSMR-E200, TSMR-F100) | Recommended – Requires minor concentration adjustment (±0.05% w/w) |
| Sumitomo Chemical SPR series | Suitable – Validated for standard i-line and KrF processes; not recommended for EUV resists |
| Screen Semiconductor Solutions (SSS) Track Platforms | Highly Recommended – Pre-qualified on CLEAN TRACK LITHIUS Pro Z and ACTUS platforms |
Q1: What is the CAS Registry Number for RZX-3038?
A: RZX-3038 is a proprietary multi-component formulation; individual components include TMAH (CAS 75-59-2), but the final product does not carry a single CAS number per IUPAC and regulatory guidance for complex mixtures.
Q2: What is the typical working concentration and consumption rate per wafer?
A: Standard dilution is 0.20–0.25% w/w in ultrapure deionized water (18.2 MΩ·cm). Average consumption is 0.8–1.2 mL per 200-mm wafer (puddle mode) or 1.5–2.0 mL per 300-mm wafer (spray mode), depending on resist thickness and process time.
Q3: How does RZX-3038 compare to standard 2.38% TMAH developers?
A: RZX-3038 delivers equivalent resolution at ~1/10th the nominal TMAH concentration, reducing rinse water demand, waste treatment burden, and substrate undercut—while maintaining superior CD uniformity and reduced development defectivity.
Q4: Is RZX-3038 compliant with SEMI S2/S8 and subject to extractables/leachables testing?
A: Yes. RZX-3038 meets SEMI S2 (safety) and S8 (environmental health) requirements. Extractables data (per SEMI F57) confirms <1 ppb organics and <5 ppb total metals in contact with quartz and stainless-steel wet benches after 72-hr static exposure at 25 °C.
Q5: Does RZX-3038 require special handling for migration-sensitive applications (e.g., biomedical microfluidics)?
A: Yes. For implantable or diagnostic microfluidic devices, we recommend post-development DI water rinse ≥30 seconds and inline TOC monitoring (<5 ppb) to ensure residual developer removal; validation kits available upon request.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
