Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

Positive Photoresist RZJ-3200

RZJ-3200 is a high-resolution positive photoresist from the RZJ series by Beijing Zhongke Ruihua (RZJ), widely used in microfabrication for IC, MEMS and display manufacturing. It offers excellent sensitivity, resolution down to 0.5 μm, good adhesion, and compatibility with standard g-line/i-line steppers and TMAH developers.
  • positive photoresist rzj 3200_46bfb26c
  • positive photoresist rzj 3200_46bfb26c

Features Of Positive Photoresist RZJ-3200

  1. High-resolution patterning capability with sub-micron resolution (≥ 0.8 µm) under standard i-line (365 nm) exposure.

  2. Excellent adhesion to silicon, silicon dioxide, and metal substrates without additional primers.

  3. Fast and uniform development in standard 0.26 N TMAH aqueous solution at 23 °C.

  4. Low outgassing during post-exposure bake (PEB), minimizing contamination in vacuum-based lithography tools.

  5. Stable shelf life of ≥ 12 months when stored at 2–8 °C in original sealed container.

Typical Applications Of Positive Photoresist RZJ-3200

  1. Microelectronics fabrication: gate-level and interconnect patterning for CMOS and analog ICs.

  2. MEMS device manufacturing: structural layer definition for accelerometers, gyroscopes, and pressure sensors.

  3. Flat panel display (FPD) production: thin-film transistor (TFT) array patterning on glass substrates.

  4. Advanced packaging: redistribution layer (RDL) and bump mask applications in fan-out wafer-level packaging (FOWLP).

  5. Photomask blank coating for low-dose mask writing and high-fidelity pattern transfer.

Specifications Of Positive Photoresist RZJ-3200



Chemical TypeNovolac resin + diazonaphthoquinone (DNQ) photoactive compound (PAC)
Product FormClear, amber-tinted liquid solution
AppearanceHomogeneous, particle-free, low-viscosity liquid
Viscosity (25 °C)2.1 – 2.4 cP (measured per ASTM D445)
Solid Content18.5 ± 0.5 wt% (in propylene glycol monomethyl ether acetate, PGMEA)
Primary Applicationsi-line (365 nm) photolithography for semiconductor and MEMS processes
Key FeaturesHigh photospeed (~40–60 mJ/cm²), low standing wave effect, minimal dark erosion
Regulatory ComplianceREACH SVHC-free; RoHS 2015/863 compliant; no intentionally added PFAS


Compatible Systems Of Positive Photoresist RZJ-3200

Common Compatible SystemsSuitability
ASML PAS 5500 / i-line steppersHighly Recommended – Optimized exposure dose and focus latitude validated
Canon FPA-3000 i-line scannersHighly Recommended – Full process window match with standard reticles
SVGL MicraScan IIIRecommended – Requires minor focus offset calibration
Spin coaters (e.g., Tokyo Electron CLEAN TRACK LITHIUS)Suitable – Compatible with standard dispense, spin, and soft-bake modules

Positive Photoresist RZJ-3200 – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for RZJ-3200?

A: The CAS number for the formulated RZJ-3200 product is 197821-98-0. Individual components are listed separately per SDS Section 3.


Q2: What is the recommended coating thickness and corresponding spin speed range for 1.5 µm film?

A: For a nominal 1.5 µm dry film thickness on silicon wafers, spin at 3000–3500 rpm for 30 seconds using a standard dynamic dispense method; final thickness variation ≤ ±3.5% across 200 mm wafers.


Q3: How does RZJ-3200 compare to AZ® 4620 in terms of resolution and process robustness?

A: RZJ-3200 delivers comparable resolution (≤ 0.8 µm) but offers higher thermal stability during PEB (up to 120 °C) and improved resistance to developer-induced swelling versus AZ® 4620, resulting in tighter CD control over large fields.


Q4: Is RZJ-3200 suitable for use in medical device manufacturing requiring ISO 10993 biocompatibility assessment?

A: RZJ-3200 is not intended for direct patient contact or implantation. It is compatible with ISO 10993-5 (cytotoxicity) and -10 (irritation/sensitization) testing protocols when fully cured and stripped; residual monomer extraction data available upon request under NDA.



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