Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

Positive Photoresist Stripper RBL-3310

RBL-3310 is a high-performance positive photoresist stripper from the RBL series by Rongbang Chemical. Formulated for precision semiconductor and PCB manufacturing, it rapidly removes standard positive resists without damaging underlying metal layers or substrates. Its low toxicity, non-corrosive nature, and excellent residue-free performance ensure high yield and process stability in advanced lithography applications.
  • positive photoresist stripper rbl 3310_5c424c37
  • positive photoresist stripper rbl 3310_5c424c37

Features Of Positive Photoresist Stripper RBL-3310

  1. Fast, residue-free removal of standard positive photoresists (e.g., AZ® 4620, Shipley S1800 series) without damaging underlying metal or dielectric layers.

  2. Non-halogenated, low-VOC formulation designed for improved workplace safety and reduced environmental impact.

  3. Stable performance across a wide temperature range (20–60 °C), enabling compatibility with both ambient soak and heated immersion processes.

  4. Low surface tension and high wettability ensure uniform coverage and effective stripping in high-aspect-ratio features.

  5. Compatible with automated wafer cleaning tools and batch processing systems—no foaming or carryover issues observed.

Typical Applications Of Positive Photoresist Stripper RBL-3310

  1. Semiconductor front-end-of-line (FEOL) and back-end-of-line (BEOL) photomask and wafer-level resist stripping.

  2. MEMS fabrication requiring selective removal of thick positive resists after etch or lift-off steps.

  3. Advanced packaging processes including fan-out wafer-level packaging (FOWLP) and redistribution layer (RDL) patterning.

  4. Flat panel display (FPD) manufacturing for TFT array and color filter alignment layer resist removal.

  5. R&D and pilot-line applications where process flexibility and material compatibility are critical.

Specifications Of Positive Photoresist Stripper RBL-3310



Chemical TypeOrganic solvent blend (NMP-free, non-amine, non-sulfur)
Product FormLiquid (ready-to-use)
AppearanceClear, pale yellow to amber liquid
Density (25 °C)0.98–1.02 g/cm³
pH (neat)Neutral (~6.8–7.2)
Primary ApplicationsPositive photoresist stripping, post-etch clean, post-lift-off residue removal
Key FeaturesNon-corrosive to Al, Cu, Ti, SiO₂, Si₃N₄; low metal ion content (<1 ppb Fe, Cu, Ni)
Regulatory ComplianceREACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold


Compatible Systems Of Positive Photoresist Stripper RBL-3310

Common Compatible SystemsSuitability
Modutek WPS-1200 Series Wet BenchesHighly Recommended – Optimized flow rate and temperature control for full resist removal in ≤3 min
Screen Semi FSP-3000 Spray CleanersRecommended – Requires minor nozzle calibration; achieves >99.9% residue-free yield
SEMES Vesta™ Immersion ToolsHighly Recommended – Fully validated for 200 mm and 300 mm wafer processing
Technics SP-800 Batch ProcessorsSuitable – Effective with standard agitation and 45 °C dwell time; no tank corrosion observed

Positive Photoresist Stripper RBL-3310 – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for RBL-3310?

A: RBL-3310 is a proprietary multi-component formulation; individual components have CAS numbers, but the final mixture is not assigned a single CAS number per IUPAC and EPA guidelines.


Q2: What is the recommended usage concentration and process time?

A: Use undiluted at 25–55 °C; typical immersion time is 60–180 seconds depending on resist thickness and crosslink density. No dilution required.


Q3: How does RBL-3310 compare to NMP-based strippers in terms of safety and performance?

A: RBL-3310 eliminates NMP (CAS 872-50-4), removing reproductive toxicity concerns and enabling safer handling without mandatory dermal protection. Performance matches or exceeds NMP-based equivalents in stripping rate and residue control on common positive resists.


Q4: Is RBL-3310 compliant with semiconductor industry migration testing requirements (e.g., JEDEC J-STD-020, IEC 62321)?

A: Yes—validated per IEC 62321-3-1 for restricted substance screening and shows no detectable leaching of halogens, heavy metals, or phosphorus-containing compounds under standard wafer rinse and bake conditions.



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