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Fast, residue-free removal of standard positive photoresists (e.g., AZ® 4620, Shipley S1813) without attacking underlying metal or dielectric layers.
Non-halogenated, low-VOC formulation designed for improved workplace safety and reduced environmental impact.
Stable performance across a wide temperature range (20–65 °C), enabling compatibility with both ambient soak and heated immersion processes.
Low surface tension and high wettability ensure uniform coverage and efficient stripping in high-aspect-ratio features.
Compatible with automated batch and single-wafer wet processing equipment; minimal foaming and easy rinsing.
Semiconductor front-end-of-line (FEOL) and back-end-of-line (BEOL) photomask and wafer cleaning.
MEMS and microfabrication processes requiring precise resist removal prior to etch or deposition steps.
Flat panel display (FPD) manufacturing, including TFT-LCD and OLED array patterning cleanup.
Advanced packaging applications such as bumping, redistribution layer (RDL), and through-silicon via (TSV) processing.
Research & development labs performing rapid prototyping of microstructures on silicon, glass, and compound substrates.
| Chemical Type | Organic solvent-based blend (non-amine, non-sulfur) |
| Product Form | Liquid, ready-to-use |
| Appearance | Clear, colorless to pale yellow liquid |
| Odor | Mild, characteristic organic solvent odor |
| Primary Applications | Positive photoresist stripping, post-etch resist clean, lift-off residue removal |
| Key Features | Non-corrosive to Al, Cu, Ti, SiO₂, and Si₃N₄; compatible with photoresist hardbakes up to 150 °C |
| Benefits | Reduced process time vs. traditional NMP-based strippers; no post-strip plasma ash required in most cases |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; not classified as hazardous under GHS Rev. 9 (Category 0) |
| Common Compatible Systems | Suitability |
| Modutek Teflon®-lined batch wet stations | Highly Recommended – Excellent chemical resistance and thermal stability at 60 °C |
| Screen Semiconductor SSW series spin-rinse developers/strippers | Highly Recommended – Optimized for low-foam, high-uniformity dispensing and dwell |
| SEZ (now part of SCREEN) AURA™ and EVOKE™ platforms | Recommended – Validated for single-wafer processing with adjustable temperature and spray pressure |
| Intercon Systems ultrasonic immersion tanks (stainless steel with PTFE coating) | Suitable – Requires tank temperature control and filtered recirculation to maintain bath life |
Q1: What is the CAS Registry Number for RBL-3370?
A: RBL-3370 is a proprietary multi-component formulation; individual constituents are disclosed under confidentiality and regulatory exemptions. Full compositional disclosure is available under signed CDA upon request.
Q2: What is the recommended usage concentration and temperature range?
A: RBL-3370 is supplied as a ready-to-use liquid. Recommended process conditions: 45–60 °C immersion or spray for 60–180 seconds, followed by DI water rinse and spin-dry. No dilution required.
Q3: How does RBL-3370 compare to traditional NMP-based strippers in terms of safety and performance?
A: Unlike NMP (CAS 872-50-4), RBL-3370 contains no reprotoxic solvents and exhibits significantly lower dermal absorption potential per OECD 428 guidelines. Stripping rate is comparable at 55 °C, with superior selectivity toward barrier metals and reduced post-rinse time.
Q4: Has RBL-3370 been evaluated for extractables and leachables in contact with semiconductor-grade materials?
A: Yes — certified extractables testing per SEMI F57-0318 shows <1 ppb total organic carbon (TOC) leaching into DI water after 24h contact with quartz and PFA components at 60 °C.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
