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High-resolution patterning capability with sub-micron resolution (≤ 0.8 µm) under standard i-line exposure.
Excellent thermal stability up to 130 °C, enabling robust post-exposure bake (PEB) and etch resistance.
Low outgassing profile suitable for vacuum-based lithography tools and sensitive optical components.
Optimized adhesion to silicon, SiO₂, and metal substrates without requiring additional primers.
Environmentally compliant formulation—free of halogenated solvents and restricted phthalates per RoHS Directive.
Semiconductor front-end-of-line (FEOL) photolithography for logic and memory device fabrication.
MEMS and microfluidic device patterning requiring high aspect ratio and sidewall fidelity.
Advanced packaging applications including fan-out wafer-level packaging (FOWLP) and redistribution layer (RDL) formation.
Optoelectronic component manufacturing such as VCSELs, photodetectors, and integrated photonics waveguides.
Research & development in academic and industrial nanofabrication cleanrooms.
| Chemical Type | Positive-tone novolac-diazonaphthoquinone (DNQ) photoresist |
| Product Form | Ready-to-use liquid solution (solvent: PGMEA) |
| Appearance | Clear, pale yellow liquid, free of visible particles or gels |
| Viscosity (25 °C) | 22–24 cP (measured at 25 °C using Brookfield LVDV-II+) |
| Solid Content | 18.5–19.5 wt% (by gravimetric analysis) |
| Primary Applications | i-line (365 nm) lithography; compatible with broadband exposure systems |
| Key Features | High photospeed (~40–60 mJ/cm²), low standing-wave effect, minimal dark erosion |
| Regulatory Compliance | RoHS 2015/863/EU compliant; REACH SVHC candidate list screened; SDS available upon request |
| Common Compatible Systems | Suitability |
| ASML PAS 5500 / i-line steppers | Highly Recommended – Validated for full-field exposure and overlay accuracy ≤ 45 nm |
| Nikon NSR-S205A i-line scanner | Highly Recommended – Optimized process window confirmed across wafers 150–300 mm |
| TOK Coater/Developer Track (CLEAN TRACK LITHIUS Pro Z) | Recommended – Requires minor dispense volume calibration; full process integration support provided |
| Canon FPA-3030i4 i-line stepper | Suitable – Functional performance verified; recommended for R&D and low-volume production |
Q1: What is the CAS Registry Number for RFJ-220 Photoresist?
A: RFJ-220 Photoresist is a proprietary multi-component formulation; individual CAS numbers are assigned to key constituents (e.g., DNQ derivative: CAS 2227-17-2; novolac resin blend: CAS 9003-35-4). A full composition disclosure sheet is available under NDA.
Q2: What is the typical spin-coating thickness and corresponding recommended spin speed range?
A: At 22–24 cP viscosity, RFJ-220 achieves 1.2 ± 0.1 µm thickness at 3000 rpm (20 sec) on bare Si wafers. Thickness ranges from 0.8 µm (4000 rpm) to 2.0 µm (2000 rpm); precise calibration via ellipsometry is advised per substrate.
Q3: How does RFJ-220 compare to industry-standard AZ® 4620 in terms of resolution and process latitude?
A: RFJ-220 delivers comparable resolution (≤ 0.8 µm vs. AZ® 4620’s ≤ 0.9 µm) with wider focus-exposure latitude (EL ±10% vs. ±7%) and improved adhesion on low-k dielectrics. It exhibits lower post-apply bake sensitivity and reduced T-topping tendency.
Q4: Is RFJ-220 suitable for use in medical device manufacturing where extractables/leachables testing is required?
A: Yes — RFJ-220 has undergone preliminary USP <788> particulate matter screening and ISO 10993-12 extractables assessment (in PGMEA and aqueous simulants). Full biocompatibility data packages are available for qualified customers under confidentiality agreement.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
