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High-resolution patterning capability with sub-micron resolution (≤0.8 µm) under standard i-line (365 nm) exposure.
Excellent adhesion to silicon, silicon dioxide, and metal substrates without additional primers.
Optimized for high-throughput spin-coating processes with consistent film thickness uniformity (<±3% across 200 mm wafers).
Low outgassing profile during post-exposure bake (PEB), minimizing contamination in vacuum-based lithography tools.
Stable shelf life of 12 months when stored at 2–8 °C in original sealed container.
Front-end semiconductor manufacturing for gate and interconnect patterning in CMOS logic devices.
MEMS fabrication requiring high aspect-ratio resist profiles and etch resistance.
Advanced packaging applications including redistribution layer (RDL) and fan-out wafer-level packaging (FOWLP).
Microfluidic device prototyping on glass and fused silica substrates.
LED and power device fabrication involving thick-film (>2 µm) photoresist processing.
| Chemical Type | Novolac resin-based positive-tone photoresist |
| Product Form | Liquid solution in propylene glycol monomethyl ether acetate (PGMEA) |
| Appearance | Clear, pale yellow liquid, free of visible particles or haze |
| Viscosity (25 °C) | 22–26 cP (measured per ASTM D445) |
| Solid Content | 24.5–25.5 wt% |
| Primary Applications | i-line (365 nm) photolithography for 0.35–0.18 µm technology nodes |
| Key Features | High photospeed (~40 mJ/cm²), low standing wave effect, good thermal stability up to 130 °C |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| ASML PAS 5500 / i-line steppers | Highly Recommended – Validated for full-field exposure and overlay performance |
| Canon FPA-3000 i-line scanners | Highly Recommended – Certified for dose uniformity and CD control |
| SVGL Micrascan III | Recommended – Requires minor focus calibration; compatible with standard process recipes |
| Coater-Developer Track (CDT): Tokyo Electron CLEAN TRACK LITHIUS Pro | Highly Recommended – Fully integrated with pre-bake, PEB, and develop modules |
Q1: What is the CAS Registry Number for RZJ-325 Photoresist?
A: RZJ-325 Photoresist is a proprietary multi-component formulation; individual CAS numbers are assigned to key constituents only. Full compositional disclosure is available under NDA upon request.
Q2: What is the typical coating thickness range and corresponding spin speed for RZJ-325?
A: At 25 wt% solids, target thicknesses of 1.0–2.2 µm are achieved at 2,500–4,500 rpm (200 mm Si wafers); exact speed depends on substrate topography and ambient humidity.
Q3: How does RZJ-325 compare to RZJ-210 in terms of resolution and etch resistance?
A: RZJ-325 offers superior resolution (≤0.8 µm vs. ≥1.2 µm for RZJ-210) and ~25% higher etch resistance in CF₄/O₂ plasma, but requires tighter process control for PEB temperature uniformity.
Q4: Is RZJ-325 suitable for use in medical device manufacturing under ISO 10993 or USP Class VI requirements?
A: RZJ-325 is not certified for direct biocompatibility testing. Residual resist must be fully removed prior to device release; it is intended for fabrication only—not as a final device material.
Q5: Are there known migration or solvent extraction concerns when RZJ-325 residues remain after development and etching?
A: Fully developed and stripped RZJ-325 leaves no detectable extractables under standard SEMI cleaning protocols (SC1 + Piranha). Residual traces may occur if strip time is insufficient; recommended final clean: 10 min O₂ plasma ash followed by DI water rinse.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
