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High-resolution patterning capability for sub-micron lithography processes.
Excellent thermal stability with post-bake performance up to 120 °C.
Low outgassing profile suitable for vacuum-compatible and EUV-adjacent applications.
Consistent film uniformity across silicon, glass, and metal substrates.
Optimized for standard g-line (436 nm) and i-line (365 nm) exposure systems.
Microelectromechanical systems (MEMS) fabrication.
Semiconductor packaging and redistribution layer (RDL) patterning.
Flat panel display (FPD) array and color filter manufacturing.
Advanced sensor device photolithography (e.g., image sensors, biosensors).
Research & development in nanoscale pattern transfer and maskless lithography.
| Chemical Type | Novolac resin-based positive photoresist |
| Product Form | Liquid solution (PGMEA solvent system) |
| Appearance | Clear, pale yellow, particle-free liquid |
| Viscosity (25 °C) | 2.8 – 3.2 cP |
| Solid Content | 15.5 – 16.5 wt% |
| Primary Applications | Front-end-of-line (FEOL) and back-end-of-line (BEOL) lithography |
| Key Features | High sensitivity (~40–60 mJ/cm² at i-line), low standing wave effect, good adhesion to SiO₂ and Al |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; no intentional PFAS |
| Common Compatible Systems | Suitability |
| Canon FPA-3000 i-line Stepper | Highly Recommended – Validated for full-field exposure with <10 nm CD uniformity |
| Nikon NSR-S306B Scanner | Recommended – Requires minor focus offset calibration |
| ASML PAS 5500/300 Aligner | Suitable – Compatible with standard alignment and exposure recipes |
| Maskless laser direct writer (e.g., Heidelberg DWL 66) | Recommended – Supports 0.8 µm minimum feature size at 405 nm |
Q1: What is the CAS Registry Number for RZJ-3610 Photoresist?
A: RZJ-3610 is a proprietary formulation; individual components are listed under CAS numbers 9003-36-5 (novolac resin), 108-32-7 (phenol), and 108-65-6 (cresol). Full composition is protected under trade secret provisions.
Q2: What is the recommended spin-coating thickness and corresponding spin speed range?
A: For 1.2 ± 0.1 µm dry film thickness on silicon wafers, use 3000–4000 rpm for 30 seconds. Thickness scales predictably between 0.8 µm (2500 rpm) and 2.0 µm (5500 rpm) under controlled humidity (<40% RH).
Q3: How does RZJ-3610 compare to standard AZ® 4620 in terms of resolution and process latitude?
A: RZJ-3610 offers comparable resolution (≤0.8 µm lines/spaces) but provides ~25% wider focus latitude and improved sidewall verticality (>87°) due to optimized dissolution inhibitor balance and lower Tg shift during PAB.
Q4: Are extractable or leachable compounds assessed per ICH Q5C or USP <661.1> standards?
A: Yes — migration testing per USP <661.1> (aqueous and 50% ethanol extraction at 60 °C for 24 h) confirms total organic extractables < 1.2 µg/cm²; no detectable heavy metals (ICP-MS, LOD < 0.1 ppb).
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E-mail: wangxingqiang@ericwchem.com
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