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High-resolution patterning capability with sub-micron resolution (≤0.8 µm) under standard i-line exposure (365 nm).
Excellent thermal stability up to 140 °C, enabling robust post-exposure bake (PEB) and hard bake processes.
Superior adhesion to silicon, SiO₂, and metal substrates (e.g., Al, Cu) without requiring additional adhesion promoters.
Low outgassing profile during vacuum-based processes, minimizing contamination in lithography tools.
Compatible with aqueous alkaline developers (e.g., 0.26 N TMAH), supporting eco-friendly and high-yield development.
Front-end semiconductor manufacturing for gate and interconnect patterning in logic and memory devices.
MEMS fabrication requiring high aspect ratio resist profiles and etch resistance.
Advanced packaging applications including fan-out wafer-level packaging (FOWLP) and redistribution layer (RDL) patterning.
MicroLED display backplane patterning on glass and sapphire substrates.
Research & development in nanoimprint lithography (NIL) pre-pattern layers and hybrid lithographic processes.
| Chemical Type | Negative-tone, novolac resin–based with crosslinker and photosensitizer |
| Product Form | Ready-to-use liquid solution (solvent: PGMEA) |
| Appearance | Clear, pale yellow to amber viscous liquid |
| Viscosity (25 °C) | 22–26 cP (measured per ASTM D445) |
| Primary Applications | i-line (365 nm) and broadband UV lithography |
| Key Features | High sensitivity (~40–60 mJ/cm²), low standing wave effect, minimal swelling during development |
| Benefits | Improved CD uniformity, reduced defect density, extended process window |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| ASML PAS 5500 / XT Series Steppers | Highly Recommended – Optimized focus/exposure matrix validated |
| Canon FPA-3030i5a / i6 Scanner | Recommended – Requires minor focus offset adjustment |
| Tokyo Electron (TEL) CLEAN TRACK ACT series | Highly Recommended – Fully integrated process recipes available |
| Screen Semi Coater/Developer Systems (e.g., SD-1200) | Suitable – Verified coating uniformity and development kinetics |
Q1: What is the CAS Registry Number for RZJ-5513 Photoresist?
A: RZJ-5513 Photoresist is a proprietary multi-component formulation; individual components are listed under CAS numbers 37205-90-6 (novolac resin), 24253-37-0 (crosslinker), and 75-77-4 (PGMEA solvent). Full composition is disclosed under NDA.
Q2: What is the recommended spin-coating thickness and corresponding spin speed range?
A: For 1.2–1.4 µm dry film thickness (measured by ellipsometry), use 2500–3200 rpm for 30 seconds on 200 mm wafers. Thickness scales predictably with viscosity and acceleration profile.
Q3: How does RZJ-5513 compare to RZJ-5509 in terms of resolution and process latitude?
A: RZJ-5513 offers ~15% higher resolution (0.8 µm vs. 0.95 µm) and wider exposure latitude (EL ±8% vs. ±5%) due to enhanced photospeed uniformity and reduced acid diffusion—ideal for tighter design rules.
Q4: Is RZJ-5513 certified for use in food-contact or medical device manufacturing environments?
A: No—RZJ-5513 is not intended for direct food contact or implantable medical devices. It is qualified for semiconductor-grade cleanroom use only (ISO Class 1–5). Extractables testing per USP <87>/<88> is not performed.
Q5: Does RZJ-5513 exhibit measurable leaching or migration during plasma etch processes?
A: No significant migration or carbon residue has been observed under standard CF₄/O₂ or Cl₂/BCl₃ plasma etches (ICP-RIE, 10–20 mTorr, 500–1000 W). FTIR and XPS surface analysis confirms stable resist integrity post-etch.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
