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Ultra-low ionic residue to prevent wafer surface contamination and metal ion leaching.
Exceptional hydrolytic stability under acidic and neutral semiconductor cleaning conditions (pH 3–7).
Non-volatile, non-foaming formulation optimized for immersion, spray, and megasonic cleaning processes.
High purity grade with rigorous trace metal control (Fe, Cu, Ni, Na < 10 ppb by ICP-MS).
Compatible with high-precision photolithography steps—no film residue or pattern distortion observed.
Post-etch residue removal for advanced logic and memory devices (e.g., FinFET, GAA).
Photoresist stripper co-emulsifier in aqueous-based formulations.
Cleaning of copper/low-k interconnect structures prior to barrier layer deposition.
Particle dispersion stabilizer in CMP post-clean rinse solutions.
Surface conditioning agent for SiC and GaN power device wafers.
| Chemical Type | Polyoxyethylene alkyl ether (nonionic, branched C12–C15) |
| Product Form | Clear, viscous liquid |
| Appearance | Colorless to pale yellow, homogeneous |
| pH (1% aqueous solution, 25°C) | 6.2–6.8 |
| Primary Applications | Wafer cleaning, resist emulsification, residue solubilization |
| Key Features | Low volatility, non-ionic, ultra-high purity, low TOC (< 5 ppm) |
| Benefits | Minimizes defect density, eliminates post-rinse drying marks, supports sub-10 nm node requirements |
| Regulatory Compliance | REACH compliant; RoHS 2.0 compliant; no SVHCs listed above threshold |
| Common Compatible Systems | Suitability |
| Aqueous citric acid + hydrogen peroxide blends | Highly Recommended – Stable emulsion formation without phase separation at 40–60°C |
| Propylene glycol methyl ether acetate (PGMEA)-based resist strippers | Recommended – Enhances solubilization of cross-linked resist fragments |
| Dilute ammonium hydroxide (NH₄OH, 0.1–0.5%) rinses | Suitable – No precipitation or haze formation; maintains clarity for >72 h |
| Deionized water (DIW) ultrapure rinse systems (18.2 MΩ·cm) | Highly Recommended – Fully miscible; zero conductivity impact |
Q1: What is the CAS Registry Number for K1287?
A: The CAS number for Semiconductor Dedicated Nonionic Emulsifier K1287 is 9005-00-5 (registered under proprietary purified fraction specification).
Q2: What is the recommended dosage range in wafer cleaning formulations?
A: Typical use level is 0.05–0.3 wt% in final process solution; optimal concentration is validated per tool, chemistry, and feature size—start at 0.1 wt% for qualification.
Q3: How does K1287 differ from standard nonionic emulsifiers like Triton X-100 or Tween 20?
A: K1287 is engineered for semiconductor use: it contains no ethoxylated impurities (e.g., 1,4-dioxane), has lower TOC and trace metals, and undergoes additional vacuum distillation and sub-micron filtration—unlike commercial-grade surfactants.
Q4: Is K1287 compliant with SEMI S2/S8 safety standards and does it exhibit low extractables in DIW contact?
A: Yes—K1287 meets SEMI S2 (health & safety) and S8 (environmental, health & safety) requirements. Extractables testing per SEMI F57 shows < 0.5 µg/cm² total organic extractables after 1-hour DIW soak at 25°C.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
