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Ultra-high purity (≥99.999% trace metal basis) with sub-ppt level contamination control for critical semiconductor etching and cleaning processes.
Manufactured under ISO 9001 and ISO 14001 certified cleanroom conditions with rigorous lot-to-lot consistency verification.
Low non-volatile residue (NVR ≤ 10 ppb) and ultra-low chloride, sulfate, and particulate content per SEMI C37 standards.
Stabilized formulation with proprietary inhibitor system to minimize NOx off-gassing and ensure extended shelf life.
Supplied in fluoropolymer-lined, Class 100-certified HDPE or FEP containers to prevent leaching and adsorption.
Front-end-of-line (FEOL) silicon wafer surface conditioning prior to gate oxide deposition.
Post-CMP (Chemical Mechanical Polishing) residue removal for copper and low-k dielectric layers.
Photoresist stripping and sidewall passivation in advanced node (≤7 nm) lithography processes.
Pre-diffusion cleaning of silicon wafers to eliminate metallic contaminants (Fe, Cu, Ni, Cr).
Preparation of high-purity etchant blends for MEMS and power device fabrication.
| Chemical Type | Nitric Acid (HNO3) |
| Product Form | Liquid (aqueous solution) |
| Concentration | 69–70 wt% HNO3 in ultrapure water |
| Appearance | Clear, colorless liquid; free of visible particles and haze |
| Trace Metal Impurities | ≤10 ppt each for Al, Ca, Cr, Cu, Fe, K, Mg, Na, Ni, Pb, Zn (ICP-MS verified) |
| Non-Volatile Residue (NVR) | ≤10 ppb (per ASTM D1141 equivalent test) |
| Particulate Count | ≤1 particle/mL ≥0.2 µm (per SEMI F57) |
| Regulatory Compliance | REACH SVHC-free; RoHS 3 compliant; no listed TSCA or California Prop 65 concerns |
| Common Compatible Systems | Suitability |
| SEMI-standard wet bench platforms (e.g., Screen, Tokyo Electron, Lam Research) | Highly Recommended – Fully validated for bath integration and automated dispense systems |
| Single-wafer spin-rinse-dry (SRD) tools | Recommended – Compatible with quartz and PFA fluid paths; requires inline filtration |
| Recirculating bulk chemical delivery systems (BCDS) | Suitable – Stable under continuous recirculation when maintained at <25°C and shielded from light |
| On-site blending stations for mixed acid chemistries (e.g., HNO3/HF, HNO3/CH3COOH) | Highly Recommended – Demonstrated compatibility with fluoropolymer wetted materials and precision metering pumps |
Q1: What is the CAS Number for Semiconductor Raw Material MS Reagent Nitric Acid?
A: The CAS Number is 7697-37-2 for nitric acid; product-specific lot documentation includes full traceability to raw material sourcing and purification batch records.
Q2: How should this reagent be handled to prevent contamination during dispensing?
A: Use only Class 100-certified PFA or FEP tubing and fittings; avoid contact with stainless steel or glass; implement nitrogen blanketing during transfer and maintain closed-loop dispensing to prevent airborne particulate ingress.
Q3: How does MS Reagent Nitric Acid differ from standard electronic-grade (EL) nitric acid?
A: MS grade features stricter trace metal limits (≤10 ppt vs. ≤100 ppt for EL), lower NVR, enhanced particulate control, and full SEMI C37/C11 compliance—specifically engineered for sub-10nm node manufacturing where background contamination directly impacts yield.
Q4: Is there risk of extractables or leachables from packaging into the reagent during storage?
A: No—packaging uses multi-layer fluoropolymer liners (FEP + PFA) validated per USP <788> and SEMI F57 for zero detectable leachables (tested by GC-MS and ICP-MS after 90-day accelerated aging at 40°C).
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
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