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Ultra-low ionic impurity profile (<10 ppb Na⁺, K⁺, Ca²⁺, Fe³⁺) optimized for semiconductor-grade etch and cleaning processes.
High chemical purity (>99.99% GC assay) with stringent control of volatile organic impurities (VOIs) and residual solvents.
Controlled amine functionality and steric hindrance enabling selective pH buffering and metal ion chelation without aggressive corrosion.
Consistent batch-to-batch reproducibility certified via ICP-MS, GC-MS, and Karl Fischer titration per SEMI C1/C36 standards.
Non-volatile residue (NVR) <0.5 ppm after evaporation under cleanroom-controlled conditions (Class 100).
CMP (Chemical Mechanical Planarization) slurry additive for copper and low-k dielectric polishing control.
Photoresist stripping formulation component in advanced node (≤7 nm) front-end-of-line (FEOL) processes.
Post-etch residue removal agent for high-aspect-ratio silicon and SiN structures in memory and logic fabrication.
pH-stabilizing co-solvent in ultra-pure aqueous cleaning chemistries for wafer surface passivation.
Chelating agent in electroless plating baths to suppress spontaneous metal reduction and improve film uniformity.
| Chemical Type | Secondary alkanolamine (diethanolamine analog with isopropyl substitution) |
| Product Form | Pale yellow to colorless clear liquid |
| Appearance | Homogeneous, free from visible particulates or haze |
| Melting Point | 40–42 °C (solidifies cleanly; no supercooling observed) |
| Primary Applications | Semiconductor wet processing: cleaning, stripping, CMP, plating |
| Key Features | Low volatility, high boiling point (233 °C), dual hydroxyl groups, sterically hindered nitrogen |
| Benefits | Reduces micro-roughness, minimizes metal contamination, enhances process window stability |
| Regulatory Compliance | REACH registered; RoHS 3 compliant; SEMI SP1/SP2 certified; ISO 9001 & ISO 14001 audited |
| Common Compatible Systems | Suitability |
| Aqueous-based alkaline strippers (e.g., TMAH derivatives) | Highly Recommended – Enables stable pH 10.5–11.8 with negligible foam generation |
| Copper CMP slurries (colloidal silica & glycine systems) | Highly Recommended – Improves Cu removal rate selectivity vs. TaN barrier without increasing dishing |
| Hydrogen peroxide–based cleaning formulations | Recommended – Acts as stabilizer against H₂O₂ decomposition; requires ≤0.5 wt% loading |
| Fluorinated acid mixtures (e.g., HF/NH₄F) | Suitable – Limited use at <0.1 wt%; enhances SiO₂ etch uniformity but not for SiN etch |
Q1: What is the CAS Registry Number for this specialty diisopropanolamine?
A: CAS No. 111-42-2 (verified for semiconductor-grade material meeting SEMI C36 purity specifications).
Q2: What is the recommended dosage range in copper CMP slurries?
A: Typical dosage is 0.05–0.3 wt% in final slurry formulation; optimization required per abrasive type, oxidant concentration, and pad material.
Q3: How does this grade differ from commercial-grade diisopropanolamine?
A: This grade undergoes additional sub-ppb metal purification (chelation + distillation), VOI removal via molecular sieving, and packaging in fluoropolymer-lined HDPE containers under nitrogen purge.
Q4: Is extractable leachable testing data available for contact with photoresist layers?
A: Yes — validated per SEMI F57: total extractables <0.1 ppm in PGMEA and ethyl lactate at 25 °C after 72 h immersion; no observable resist swelling or pattern deformation.
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E-mail: wangxingqiang@ericwchem.com
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