Semiconductor Raw Material Specialty Amine Series Tetraethylenepentamine

Features Of Semiconductor Raw Material Specialty Amine Series Tetraethylenepentamine

1. Ultra-high purity grade (≥99.5%) specifically refined for semiconductor-grade chemical processing environments.

2. Controlled low metal ion content (Na, K, Ca, Fe < 10 ppb) to prevent device contamination and gate oxide defects.

3. Consistent molecular weight distribution and minimized mono/di-alkylated impurities for predictable chelation and surface passivation behavior.

4. Low volatility and thermal stability up to 200 °C, supporting compatibility with high-temperature CVD and ALD precursor formulations.

5. Batch-to-batch reproducibility certified via GC-MS, NMR, and ICP-MS analytical traceability.

Typical Applications Of Semiconductor Raw Material Specialty Amine Series Tetraethylenepentamine

1. Chelating ligand in high-k dielectric precursor synthesis (e.g., HfO₂, ZrO₂ ALD precursors).

2. Surface modifier for functionalization of silicon nitride and SiO₂ wafers prior to metal seed layer deposition.

3. Stabilizer and reducing agent in colloidal dispersion of Cu and Co nanoclusters for advanced interconnect metallization.

4. Building block in polyamine-based photoresist additives for improved lithographic contrast and etch resistance.

5. Complexing agent in electroless plating baths for ultra-thin barrier layer formation (e.g., CoWP, NiB).

Specifications Of Semiconductor Raw Material Specialty Amine Series Tetraethylenepentamine

Compatible Systems Of Semiconductor Raw Material Specialty Amine Series Tetraethylenepentamine

Semiconductor Raw Material Specialty Amine Series Tetraethylenepentamine – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for this specialty-grade Tetraethylenepentamine?

A: The CAS Number is 112-57-2. This refers to the base compound; our semiconductor-grade variant carries additional lot-specific purity certification (Certificate of Analysis, CoA) and trace metals profile.

Q2: What is the recommended dosage range when used as a chelating agent in HfO₂ ALD precursor development?

A: Typical molar ratio is 1.2–1.5 equivalents of TEPA per equivalent of Hf precursor. Excess beyond 1.8 eq may increase carbon incorporation; optimization is required per specific ligand architecture and vaporization conditions.

Q3: How does this specialty TEPA differ from commercial-grade TEPA in terms of semiconductor process compatibility?

A: Unlike technical-grade TEPA (which contains ≥2% diethylenetriamine, triethylenetetramine, and volatile amines), our version undergoes multi-stage vacuum distillation and sub-ambient crystallization to remove low-boiling impurities and metal contaminants—critical for preventing nozzle clogging and wafer defectivity.

Q4: Is there data on extractable/leachable amine migration under typical BEOL thermal cycling conditions (e.g., 400 °C N₂ anneal)?

A: Yes—TGA-FTIR and TOF-SIMS analysis confirms negligible amine volatilization (< 0.002% mass loss) below 350 °C; residual surface-bound TEPA decomposes cleanly to N₂ and H₂O above 420 °C without carbonaceous residue or metal catalyst poisoning.

Q5: Does this material comply with SEMI S2/S8 safety and environmental guidelines for front-end fabs?

A: Yes—it meets SEMI S2-1712 (chemical hazard assessment) and S8-1115 (ergonomic handling) requirements. Full Safety Data Sheet (SDS) includes fab-specific exposure controls, compatible wet bench materials (e.g., PFA, ETFE), and waste neutralization protocols.