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Engineered for complete removal of polymer residues, metal halides, and etch by-products following plasma dry etch processes.
Non-corrosive formulation preserves delicate metallization layers (e.g., Cu, Al, TiN) and low-k dielectrics without undercut or surface roughening.
Low surface tension and high wettability ensure uniform cleaning across high-aspect-ratio features and 3D NAND/DRAM structures.
Compatible with standard spin-rinse, megasonic, and batch immersion tool configurations without process requalification.
Free of heavy metals, halogens, and perfluorinated compounds (PFCs), supporting environmental stewardship and EHS compliance.
Cleaning post-CF₄/O₂ or Cl₂/BCl₃-based silicon and oxide etch in advanced logic and foundry nodes (≤5 nm).
Residue removal after tungsten and titanium nitride hard mask etching in gate-last and contact formation modules.
Post-etch cleaning of copper interconnects and barrier layers in BEOL integration schemes.
Surface preparation prior to ALD/CVD film deposition to eliminate carbonaceous contamination and improve nucleation.
Enabling high-yield cleaning in 3D IC stacking and through-silicon via (TSV) manufacturing flows.
| Chemical Type | Aqueous-based, non-oxidizing organic-acid blend with chelating agents |
| Product Form | Liquid concentrate (ready-to-dilute) |
| Appearance | Clear, colorless to pale yellow solution |
| pH (1% aqueous dilution, 25°C) | 4.2 – 4.8 |
| Density (25°C) | 1.03 – 1.06 g/cm³ |
| Primary Applications | Post-plasma dry etch residue removal in semiconductor front-end and back-end processes |
| Key Features | Non-volatile residue-free, low particle generation, no fluorine or phosphoric acid |
| Regulatory Compliance | REACH SVHC compliant; RoHS 3 Directive compliant; TSCA listed |
| Common Compatible Systems | Suitability |
| TEL Unity i-Line / Nova platforms | Highly Recommended – Validated for single-wafer spray and rinse cycles with <0.5 nm SiO₂ loss |
| Lam Research VECTOR® and Kiyo™ systems | Recommended – Compatible with integrated clean-etch-clean sequences; requires minor DIW rinse optimization |
| Screen Semiconductor SPRINT series | Suitable – Effective in batch immersion mode; recommended dilution 1:10–1:20 v/v with deionized water |
| Applied Materials Centura® platform (with CleanTrack module) | Highly Recommended – Fully qualified for cluster tool integration and automated chemical delivery |
Q1: What is the CAS Registry Number for SYS-9050?
A: The CAS Registry Number for SYS-9050 Post-Dry Etch Cleaning Solution is 2278943-18-7.
Q2: What is the recommended working concentration and dwell time?
A: Typical dilution is 1:15 v/v in deionized water; dwell time ranges from 30–90 seconds at 20–25°C, depending on residue load and feature geometry.
Q3: How does SYS-9050 compare to traditional sulfuric-peroxide mixtures (SPM) or dilute HF-based cleaners?
A: Unlike aggressive oxidizers or fluoride chemistries, SYS-9050 achieves comparable residue removal without oxidizing sensitive films or attacking SiO₂/SiN interfaces—enabling higher selectivity and lower defect density.
Q4: Is SYS-9050 subject to REACH authorization or EU Biocidal Products Regulation (BPR)?
A: No. SYS-9050 contains no active biocidal substances and is not classified as a biocide under BPR. It is fully compliant with REACH Annex XIV exclusion criteria and carries no SVHC candidates above threshold.
Q5: Has migration or leaching testing been performed for use in medical device or MEMS packaging applications?
A: Yes. Extractables testing per USP <87> and <88> (cytotoxicity) confirms no detectable leachables at ppb levels; certified for Class VI biocompatibility when rinsed per standard wafer cleaning protocols.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
