Highly selective removal of post-dry etch residues—including fluorocarbon polymers, metal halides, and silicon-based particulates—without attacking underlying Si, SiO₂, or low-k dielectrics.
Low surface tension and high wettability ensure uniform coverage and effective cleaning in high-aspect-ratio features (≥20:1).
Non-oxidizing formulation minimizes native oxide regrowth and surface roughening during post-etch cleaning.
Stable at ambient temperature with >12-month shelf life when sealed; compatible with standard DI water dilution protocols (1:5 to 1:20 v/v).
Free of heavy metals, halogens (Cl⁻, Br⁻), and amine-based corrosion promoters—meets SEMI S2/S8 safety and purity requirements.
Cleaning after fluorine-based plasma etching (e.g., SF₆, CF₄, C₄F₈) of silicon, silicon nitride, and polysilicon layers.
Residue removal following deep reactive ion etching (DRIE) of MEMS and advanced packaging substrates.
Post-etch cleaning for 3D NAND and DRAM pattern transfer processes involving multi-layer hard masks.
Final rinse step prior to epitaxial growth or atomic layer deposition (ALD) to eliminate trace contaminants.
Wafer-level cleaning for compound semiconductor devices (GaAs, SiC) where chloride-free chemistry is critical.
| Chemical Type | Aqueous-based, non-ionic surfactant-enhanced chelating solution |
| Product Form | Ready-to-dilute concentrate (clear, colorless liquid) |
| Appearance | Transparent, homogeneous liquid; no phase separation or sedimentation |
| pH (1% aqueous solution, 25°C) | 6.8–7.3 |
| Density (25°C) | 1.02–1.05 g/cm³ |
| Primary Applications | Post-dry etch residue removal, silicon wafer pre-deposition cleaning |
| Key Features | Halogen-free, low-metal (≤10 ppt each of Na, K, Fe, Cu), non-volatile residue < 1 ng/cm² |
| Regulatory Compliance | REACH compliant; RoHS 2.0 Annex II conformant; no SVHCs above threshold |
| Common Compatible Systems | Suitability |
| SEZ APEX™ Series (e.g., APEX 300, APEX 400) | Highly Recommended – Optimized for single-wafer spray/rinse modules with full process validation |
| SCREEN CleanTrack™ ACT Series (ACT-8, ACT-12) | Highly Recommended – Verified compatibility with dispense, megasonic, and spin-rinse sequences |
| TOKYO ELECTRON (TEL) Unity™ Dry Clean Platform | Recommended – Validated for inline wet-strip integration with dry etch cluster tools |
| Modutek QF Series Batch Wet Stations | Suitable – Requires minor adjustment of dwell time and rinse cycle for optimal particle reduction |
Q1: What is the CAS Registry Number for SYS-9070?
A: SYS-9070 is a proprietary multi-component formulation; individual ingredients are disclosed under confidentiality agreement, and the mixture itself does not carry a CAS number per IUPAC guidelines for complex commercial blends.
Q2: What is the recommended working concentration and process temperature?
A: Dilute 5–20 vol% in ultrapure water (18.2 MΩ·cm, TOC < 1 ppb); operate at 20–25°C. Higher concentrations (>15%) may be used for aggressive residue loads, with dwell time adjusted to 30–120 seconds.
Q3: How does SYS-9070 compare to traditional SC1 (NH₄OH:H₂O₂:H₂O) solutions?
A: Unlike SC1, SYS-9070 is non-oxidizing, eliminates silicon surface pitting and micro-roughness, avoids ammonium salt precipitation, and enables direct transition to hydrophobic surfaces without additional surface modification steps.
Q4: Has SYS-9070 been tested for extractables and leachables in contact with fluoropolymer fluid-handling components?
A: Yes—validated per USP <87> and <88> for Class VI biocompatibility; shows negligible fluorinated extractables (<0.5 µg/mL) when circulated through PFA, FEP, and ETFE tubing at 25°C for 72 hours.
Q5: Does SYS-9070 require special waste treatment before discharge?
A: No heavy metal or halogen content requires specialized neutralization; standard acidic/alkaline pH adjustment followed by precipitation and filtration meets local industrial wastewater discharge limits (e.g., EPA 40 CFR Part 417).
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