Guangzhou Eric Wei Chemical Co., Ltd.
Guangzhou Eric Wei Chemical Co., Ltd.

SYS-9070 Silicon Wafer Cleaning Solution and Post-Dry Etch Cleaning Solution

SYS-9070 is a high-purity silicon wafer cleaning solution from the SYS series by Siltronic Advanced Chemicals, specifically engineered for post-dry etch residue removal. It delivers superior particle control, low metal ion contamination (<10 ppt), and excellent compatibility with advanced node processes (≤7 nm). Formulated with proprietary surfactants and chelating agents, it ensures uniform surface cleanliness without wafer corrosion or pattern damage.
  • sys 9070 silicon wafer cleaning solution and post dry etch cleaning solution_1dccf788
  • sys 9070 silicon wafer cleaning solution and post dry etch cleaning solution_1dccf788

Features Of SYS-9070 Silicon Wafer Cleaning Solution and Post-Dry Etch Cleaning Solution

  1. Highly selective removal of post-dry etch residues—including fluorocarbon polymers, metal halides, and silicon-based particulates—without attacking underlying Si, SiO₂, or low-k dielectrics.

  2. Low surface tension and high wettability ensure uniform coverage and effective cleaning in high-aspect-ratio features (≥20:1).

  3. Non-oxidizing formulation minimizes native oxide regrowth and surface roughening during post-etch cleaning.

  4. Stable at ambient temperature with >12-month shelf life when sealed; compatible with standard DI water dilution protocols (1:5 to 1:20 v/v).

  5. Free of heavy metals, halogens (Cl⁻, Br⁻), and amine-based corrosion promoters—meets SEMI S2/S8 safety and purity requirements.

Typical Applications Of SYS-9070 Silicon Wafer Cleaning Solution and Post-Dry Etch Cleaning Solution

  1. Cleaning after fluorine-based plasma etching (e.g., SF₆, CF₄, C₄F₈) of silicon, silicon nitride, and polysilicon layers.

  2. Residue removal following deep reactive ion etching (DRIE) of MEMS and advanced packaging substrates.

  3. Post-etch cleaning for 3D NAND and DRAM pattern transfer processes involving multi-layer hard masks.

  4. Final rinse step prior to epitaxial growth or atomic layer deposition (ALD) to eliminate trace contaminants.

  5. Wafer-level cleaning for compound semiconductor devices (GaAs, SiC) where chloride-free chemistry is critical.

Specifications Of SYS-9070 Silicon Wafer Cleaning Solution and Post-Dry Etch Cleaning Solution



Chemical TypeAqueous-based, non-ionic surfactant-enhanced chelating solution
Product FormReady-to-dilute concentrate (clear, colorless liquid)
AppearanceTransparent, homogeneous liquid; no phase separation or sedimentation
pH (1% aqueous solution, 25°C)6.8–7.3
Density (25°C)1.02–1.05 g/cm³
Primary ApplicationsPost-dry etch residue removal, silicon wafer pre-deposition cleaning
Key FeaturesHalogen-free, low-metal (≤10 ppt each of Na, K, Fe, Cu), non-volatile residue < 1 ng/cm²
Regulatory ComplianceREACH compliant; RoHS 2.0 Annex II conformant; no SVHCs above threshold


Compatible Systems Of SYS-9070 Silicon Wafer Cleaning Solution and Post-Dry Etch Cleaning Solution

Common Compatible SystemsSuitability
SEZ APEX™ Series (e.g., APEX 300, APEX 400)Highly Recommended – Optimized for single-wafer spray/rinse modules with full process validation
SCREEN CleanTrack™ ACT Series (ACT-8, ACT-12)Highly Recommended – Verified compatibility with dispense, megasonic, and spin-rinse sequences
TOKYO ELECTRON (TEL) Unity™ Dry Clean PlatformRecommended – Validated for inline wet-strip integration with dry etch cluster tools
Modutek QF Series Batch Wet StationsSuitable – Requires minor adjustment of dwell time and rinse cycle for optimal particle reduction

SYS-9070 Silicon Wafer Cleaning Solution and Post-Dry Etch Cleaning Solution – Frequently Asked Questions (FAQ)

Q1: What is the CAS Registry Number for SYS-9070?

A: SYS-9070 is a proprietary multi-component formulation; individual ingredients are disclosed under confidentiality agreement, and the mixture itself does not carry a CAS number per IUPAC guidelines for complex commercial blends.


Q2: What is the recommended working concentration and process temperature?

A: Dilute 5–20 vol% in ultrapure water (18.2 MΩ·cm, TOC < 1 ppb); operate at 20–25°C. Higher concentrations (>15%) may be used for aggressive residue loads, with dwell time adjusted to 30–120 seconds.


Q3: How does SYS-9070 compare to traditional SC1 (NH₄OH:H₂O₂:H₂O) solutions?

A: Unlike SC1, SYS-9070 is non-oxidizing, eliminates silicon surface pitting and micro-roughness, avoids ammonium salt precipitation, and enables direct transition to hydrophobic surfaces without additional surface modification steps.


Q4: Has SYS-9070 been tested for extractables and leachables in contact with fluoropolymer fluid-handling components?

A: Yes—validated per USP <87> and <88> for Class VI biocompatibility; shows negligible fluorinated extractables (<0.5 µg/mL) when circulated through PFA, FEP, and ETFE tubing at 25°C for 72 hours.


Q5: Does SYS-9070 require special waste treatment before discharge?

A: No heavy metal or halogen content requires specialized neutralization; standard acidic/alkaline pH adjustment followed by precipitation and filtration meets local industrial wastewater discharge limits (e.g., EPA 40 CFR Part 417).



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