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Highly effective removal of hardened negative photoresists including novolac-based and epoxy-based formulations.
Non-corrosive to aluminum, copper, titanium, and stainless steel substrates at recommended process temperatures.
Low volatility and high flash point (≥120 °C) for enhanced workplace safety and reduced VOC emissions.
Water-rinseable residue profile minimizes post-strip cleaning steps and reduces DI water consumption.
Stable performance across extended bath life (>72 hours) under continuous recirculation in immersion or spray systems.
Post-etch and post-ion implant resist stripping in semiconductor front-end fabrication.
Removal of patterned negative resists from MEMS and microfluidic device wafers.
Strip application in advanced packaging processes including fan-out wafer-level packaging (FOWLP).
Cleaning of photomask blanks after negative resist development and inspection.
Resist removal from ceramic and quartz substrates used in RF filter and sensor manufacturing.
| Chemical Type | Amine-based alkaline solvent blend with proprietary co-solvents |
| Product Form | Liquid (ready-to-use) |
| Appearance | Clear, pale yellow to amber liquid |
| pH (1% aqueous solution, 25 °C) | 12.8–13.2 |
| Density (25 °C) | 1.04–1.06 g/cm³ |
| Flash Point (closed cup) | ≥120 °C (ASTM D93) |
| Primary Applications | Negative photoresist stripping on Si, SiO₂, metal, and ceramic substrates |
| Regulatory Compliance | REACH compliant; RoHS 2015/863 Annex II compliant; no SVHCs above 0.1% w/w |
| Common Compatible Systems | Suitability |
| SEZ 300 mm Spray Solvent System | Highly Recommended – Optimized nozzle compatibility and thermal stability up to 85 °C |
| Screen Semiconductor Immersion Bath Units (e.g., S-3000 series) | Highly Recommended – Proven bath stability and uniform strip rate across 200–300 mm wafers |
| Modutek Teflon®-lined ultrasonic tanks | Recommended – Requires temperature control ≤75 °C to maintain long-term material compatibility |
| Wet bench stations with PVC or PP construction | Suitable – Compatible with standard wet bench piping and filtration; avoid stainless steel pumps without passivation |
Q1: What is the CAS Registry Number for SYS-9510?
A: The CAS Registry Number for SYS-9510 Negative Photoresist Stripper is 1874236-88-1.
Q2: What is the recommended process concentration and temperature range?
A: SYS-9510 is supplied as a ready-to-use formulation. Recommended operating temperature is 65–80 °C; no dilution required. Immersion time typically ranges from 3–10 minutes depending on resist thickness and cure condition.
Q3: How does SYS-9510 compare to traditional NMP-based strippers in terms of environmental impact?
A: Unlike NMP (CAS 872-50-4), SYS-9510 contains no reprotoxic solvents and is not classified as a Substance of Very High Concern (SVHC) under REACH. It exhibits lower aquatic toxicity (OECD 201, EC50 > 100 mg/L) and is readily biodegradable (OECD 301B, >60% in 28 days).
Q4: Has SYS-9510 been evaluated for extractables and leachables in high-purity applications?
A: Yes — SYS-9510 has undergone ICP-MS analysis per SEMI F57 guidelines. Total metallic extractables are <50 ppt for Al, Fe, Cr, Ni, Cu, and Na when processed in Class 1 cleanroom-compatible stainless steel or fluoropolymer systems.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
