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Enables ultra-low stress, high-ductility copper bump deposits essential for advanced 2.5D/3D IC interconnects.
Delivers exceptional micro-throwing power for uniform plating across high-aspect-ratio under-bump metallization (UBM) structures.
Provides outstanding bath stability and long-term operational consistency under continuous high-current-density plating conditions.
Minimizes organic inclusion and suppresses void formation, supporting reliable thermal cycling performance in flip-chip assemblies.
Compatible with standard acid copper electrolytes and designed for seamless integration into automated semiconductor electroplating lines.
Flip-chip copper pillar bumping for mobile processors and AI accelerators.
Advanced packaging applications including fan-out wafer-level packaging (FOWLP) and silicon interposers.
Copper micro-bumping for high-bandwidth memory (HBM) stacks and chiplet-based architectures.
Wafer-level CSP (WLCSP) and redistribution layer (RDL) copper plating processes.
High-reliability automotive and aerospace semiconductor interconnects requiring JEDEC-compliant bump integrity.
| Chemical Type | Proprietary blend of suppressors, accelerators, and levelers based on sulfonated organic compounds and low-molecular-weight heterocyclic additives |
| Product Form | Liquid concentrate (aqueous solution) |
| Appearance | Clear to slightly hazy, pale yellow liquid |
| pH (1% aqueous solution) | 4.2 – 4.8 |
| Density (25°C) | 1.03 – 1.06 g/cm³ |
| Primary Applications | Copper bump electroplating for semiconductor packaging and advanced interconnects |
| Key Features | Low-additive-consumption formulation; compatible with real-time CV analysis and automated dosing systems |
| Regulatory Compliance | REACH SVHC-free; RoHS 2015/863 compliant; no intentionally added PFAS or heavy metals |
| Common Compatible Systems | Suitability |
| Atotech EcoVia™ Cu Bumping Platform | Highly Recommended – Fully validated with process control libraries and SPC integration |
| Technic Inc. UBM-Cu™ Electrolyte System | Recommended – Requires minor bath conditioning; supports >200 kA·h/L throughput |
| Shin-Etsu MicroSi™ Acid Copper Plating Baths | Suitable – Compatible with standard chloride and sulfuric acid concentrations (45–60 g/L Cu²⁺, 50–70 g/L H₂SO₄) |
| Innovative Micro Technology (IMT) BumpPlater® Lines | Highly Recommended – Pre-qualified for inline metrology feedback loops and closed-loop replenishment |
Q1: What is the CAS Registry Number for SYS-UPB3200?
A: SYS-UPB3200 is a proprietary multi-component formulation and does not have a single CAS number; individual major constituents are documented in the full Safety Data Sheet (SDS) upon request under NDA.
Q2: What is the typical working concentration range in copper plating baths?
A: Recommended dosage is 0.8–1.5 mL/L, adjusted dynamically via cyclic voltammetric stripping (CVS) analysis; optimal performance is achieved within ±10% of target current efficiency at 25–40 mA/cm².
Q3: How does SYS-UPB3200 differ from conventional acid copper brighteners in bump applications?
A: Unlike general-purpose brighteners, SYS-UPB3200 is engineered specifically for sub-20 µm bump geometries—offering superior grain refinement, reduced tensile stress (<20 MPa), and negligible incorporation of sulfur or carbon impurities that compromise electromigration resistance.
Q4: Is SYS-UPB3200 subject to migration or leaching concerns in final packaged devices?
A: No measurable migration or extractable organics have been detected under JEDEC J-STD-020 reflow conditions (peak 260°C, 60 sec) or 1000-hr 85°C/85% RH reliability testing per IPC-9701; residual additive content in plated copper remains below 5 ppm by TOF-SIMS.
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E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
