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Enables void-free, bottom-up copper fill for high-aspect-ratio TSVs (≥10:1) with exceptional uniformity and low defect density.
Proprietary suppressor/accelerator balance delivers stable plating performance across wide current density ranges (1–10 mA/cm²).
Low-additive-consumption formulation reduces drag-out losses and extends bath life—typical replenishment rate < 0.5 mL/L per Ah.
Compatible with standard acidic copper sulfate electrolytes (e.g., 200 g/L CuSO₄·5H₂O, 50–70 g/L H₂SO₄, 50 ppm Cl⁻).
Non-cyanide, RoHS-compliant chemistry with no heavy-metal accelerators or prohibited aromatic amines.
3D IC stacking and heterogeneous integration in advanced packaging (e.g., HBM, CoWoS, InFO).
MEMS sensor interconnect fabrication requiring hermetic, low-resistance vertical copper vias.
Image sensor backside illumination (BSI) wafers with sub-5 µm pitch TSV arrays.
High-frequency RF and millimeter-wave SiP modules demanding minimal via resistance variation (< ±3%).
Power semiconductor substrates (e.g., SiC, GaN) requiring thermally robust, low-stress copper interconnects.
| Chemical Type | Organic additive blend (suppressors, accelerators, levelers) |
| Product Form | Aqueous liquid concentrate |
| Appearance | Clear, light amber liquid |
| Specific Gravity (25°C) | 1.04–1.07 g/cm³ |
| pH (as supplied) | 3.8–4.2 |
| Primary Applications | TSV copper electroplating for silicon wafers (300 mm & 200 mm) |
| Key Features | Bottom-up fill, low incorporation of carbon/hydrogen, minimal post-plating cleaning burden |
| Regulatory Compliance | RoHS 2015/863/EU compliant; REACH SVHC-free; no listed California Prop 65 substances |
| Common Compatible Systems | Suitability |
| Applied Materials SABRE® TSV Platform | Highly Recommended – Validated for full-wafer TSV fill at 20–50 µm depths |
| Lam Research Altus® Max TSV System | Highly Recommended – Optimized for pulsed reverse (PR) plating mode compatibility |
| Technic Inc. ECO-PLATE™ TSV Chemistry Suite | Recommended – Requires minor bath conditioning; compatible with Eco-Plate base electrolyte |
| Custom-built horizontal plating tools (in-house R&D lines) | Suitable – Requires flow-rate and agitation calibration; technical support provided |
Q1: What is the CAS Registry Number for SYS-UPT3300?
A: SYS-UPT3300 is a proprietary multi-component formulation and does not carry a single CAS number; individual constituents are documented in the full Safety Data Sheet (SDS) upon request.
Q2: What is the recommended working concentration range in the plating bath?
A: Typical dosage is 0.8–1.5 mL/L, adjusted based on via geometry and plating parameters; initial setup requires Hull cell optimization and real-time CV analysis.
Q3: How does SYS-UPT3300 compare to conventional acid copper additives (e.g., Janus, ViaForm) in TSV applications?
A: Unlike general-purpose acid copper additives, SYS-UPT3300 is specifically engineered for TSV-specific mass transport limitations—offering superior bottom-up kinetics, lower organic inclusion, and reduced risk of seam formation at via necks.
Q4: Is SYS-UPT3300 subject to migration or leaching into subsequent process layers (e.g., dielectrics, passivation)?
A: No detectable migration occurs under standard BEOL conditions; rigorous TOF-SIMS and XPS analysis confirms complete removal after standard sulfuric-peroxide clean (SPM) and DI rinse steps.
Contact With Us:
E-mail: wangxingqiang@ericwchem.com
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Building A1, Jiete Industrial Park, Huangpu District, Guangzhou City, Guangdong Province, China
